One critical aspect of metal chemical mechanical polishing (CMP) is the formation of a thin surface layer on the metal surface. The formation and removal of this layer controls the CMP process. In this study, we focus on the kinetics of formation and the mechanical properties of the thin surface layer on the copper surface. The formation dynamics were investigated using transient electrochemical measurements while the mechanical properties of the surface layer were determined using nanoindentation and x-ray reflectivity measurements. The overall results showed that the mechanical properties of the nano-scale surface layer are strongly dependent on the type of chemical additives (oxidizer, inhibitor, complexing agent etc.) and their concentrations.
|Number of pages
|Published - 2003
|Chemical Mechanical Planarization VI - Proceddings of the International Symposium - Orlando, FL., United States
Duration: 12 Oct 2003 → 17 Oct 2003
|Chemical Mechanical Planarization VI - Proceddings of the International Symposium
|12/10/03 → 17/10/03