Characterization of a Drift-Step-Recovery Diode Based on All Epi-Si Growth

Amit S. Kesar, Yaakov Sharabani, Inbar Shafir, Shoval Zoran, Ariel Sher

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

Drift-step-recovery diodes (DSRDs) are fast-opening switches capable of delivering nanosecond-scale high-voltage (HV) pulses into a load. The HV capability is achieved by stacking DSRD dies in series. In this paper, we characterize a DSRD die based on silicon epitaxial layers, which was designed and manufactured at the Soreq Nuclear Research Center. In the static characterization, we have measured the diode's forward-And reverse-blocking voltages, and the junction capacitance. In the dynamic characterization, we have measured the peak voltage and its rise time for a single die, and up to a stack of 32 dies in series, where the stack was operated at current densities of up to ~1.3 kA/cm2. The shortest rise time was 0.65 ns from a stack of five dies. An HV increase of 250 V per die was obtained. The maximum measured peak voltage was 6.09 kV with a rise time of 2.2 ns, and these results being limited by the setup capability.

Original languageEnglish
Pages (from-to)2424-2428
Number of pages5
JournalIEEE Transactions on Plasma Science
Volume44
Issue number10
DOIs
StatePublished - Oct 2016
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 1973-2012 IEEE.

Keywords

  • Drift-step-recovery diode (DSRD)
  • power semiconductor diode switches
  • pulse generation

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