Characterization of a Drift-Step-Recovery Diode Based on All Epi-Si Growth

Amit S. Kesar; Yaakov Sharabani; Inbar Shafir; Shoval Zoran; Ariel Sher

doi:10.1109/tps.2016.2605744

Characterization of a Drift-Step-Recovery Diode Based on All Epi-Si Growth

Amit S. Kesar, Yaakov Sharabani, Inbar Shafir, Shoval Zoran, Ariel Sher

Soreq Nuclear Research Center

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Drift-step-recovery diodes (DSRDs) are fast-opening switches capable of delivering nanosecond-scale high-voltage (HV) pulses into a load. The HV capability is achieved by stacking DSRD dies in series. In this paper, we characterize a DSRD die based on silicon epitaxial layers, which was designed and manufactured at the Soreq Nuclear Research Center. In the static characterization, we have measured the diode's forward-And reverse-blocking voltages, and the junction capacitance. In the dynamic characterization, we have measured the peak voltage and its rise time for a single die, and up to a stack of 32 dies in series, where the stack was operated at current densities of up to ~1.3 kA/cm². The shortest rise time was 0.65 ns from a stack of five dies. An HV increase of 250 V per die was obtained. The maximum measured peak voltage was 6.09 kV with a rise time of 2.2 ns, and these results being limited by the setup capability.

Original language	English
Pages (from-to)	2424-2428
Number of pages	5
Journal	IEEE Transactions on Plasma Science
Volume	44
Issue number	10
DOIs	https://doi.org/10.1109/tps.2016.2605744
State	Published - Oct 2016
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 1973-2012 IEEE.

Keywords

Drift-step-recovery diode (DSRD)
power semiconductor diode switches
pulse generation

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10.1109/tps.2016.2605744

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title = "Characterization of a Drift-Step-Recovery Diode Based on All Epi-Si Growth",

abstract = "Drift-step-recovery diodes (DSRDs) are fast-opening switches capable of delivering nanosecond-scale high-voltage (HV) pulses into a load. The HV capability is achieved by stacking DSRD dies in series. In this paper, we characterize a DSRD die based on silicon epitaxial layers, which was designed and manufactured at the Soreq Nuclear Research Center. In the static characterization, we have measured the diode's forward-And reverse-blocking voltages, and the junction capacitance. In the dynamic characterization, we have measured the peak voltage and its rise time for a single die, and up to a stack of 32 dies in series, where the stack was operated at current densities of up to ~1.3 kA/cm2. The shortest rise time was 0.65 ns from a stack of five dies. An HV increase of 250 V per die was obtained. The maximum measured peak voltage was 6.09 kV with a rise time of 2.2 ns, and these results being limited by the setup capability.",

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AU - Zoran, Shoval

AU - Sher, Ariel

PY - 2016/10

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N2 - Drift-step-recovery diodes (DSRDs) are fast-opening switches capable of delivering nanosecond-scale high-voltage (HV) pulses into a load. The HV capability is achieved by stacking DSRD dies in series. In this paper, we characterize a DSRD die based on silicon epitaxial layers, which was designed and manufactured at the Soreq Nuclear Research Center. In the static characterization, we have measured the diode's forward-And reverse-blocking voltages, and the junction capacitance. In the dynamic characterization, we have measured the peak voltage and its rise time for a single die, and up to a stack of 32 dies in series, where the stack was operated at current densities of up to ~1.3 kA/cm2. The shortest rise time was 0.65 ns from a stack of five dies. An HV increase of 250 V per die was obtained. The maximum measured peak voltage was 6.09 kV with a rise time of 2.2 ns, and these results being limited by the setup capability.

AB - Drift-step-recovery diodes (DSRDs) are fast-opening switches capable of delivering nanosecond-scale high-voltage (HV) pulses into a load. The HV capability is achieved by stacking DSRD dies in series. In this paper, we characterize a DSRD die based on silicon epitaxial layers, which was designed and manufactured at the Soreq Nuclear Research Center. In the static characterization, we have measured the diode's forward-And reverse-blocking voltages, and the junction capacitance. In the dynamic characterization, we have measured the peak voltage and its rise time for a single die, and up to a stack of 32 dies in series, where the stack was operated at current densities of up to ~1.3 kA/cm2. The shortest rise time was 0.65 ns from a stack of five dies. An HV increase of 250 V per die was obtained. The maximum measured peak voltage was 6.09 kV with a rise time of 2.2 ns, and these results being limited by the setup capability.

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Characterization of a Drift-Step-Recovery Diode Based on All Epi-Si Growth

Abstract

Bibliographical note

Keywords

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