Characterization and modeling of traps and RF frequency dispersion in AlGaN/AlN/GaN HEMTs

Héctor Sánchez-Martín; Óscar García-Pérez; Ignacio Iñiguez-De-La-Torre; Susana Pérez; Tomás González; Javier Mateos; Philippe Altuntas; Nicolas Defrance; Marie Lesecq; Virginie Hoel; Yvon Cordier; Stéphanie Rennesson

doi:10.1109/eumic.2016.7777513

Characterization and modeling of traps and RF frequency dispersion in AlGaN/AlN/GaN HEMTs

Héctor Sánchez-Martín, Óscar García-Pérez, Ignacio Iñiguez-De-La-Torre, Susana Pérez, Tomás González, Javier Mateos, Philippe Altuntas, Nicolas Defrance, Marie Lesecq, Virginie Hoel, Yvon Cordier, Stéphanie Rennesson

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The performance of GaN transistors is still limited by physical and fabrication problems, mainly related to different kinds of traps. In this work, virgin transistors reveals strong low frequency dispersion both in the transconductance and output conductance, that we attribute to the presence of traps in the GaN channel and the ohmic contacts. These effects have been modeled in the equivalent circuit of the transistors achieving a satisfactory agreement with the measured S-parameters.

Original language	English
Title of host publication	EuMIC 2016 - 11th European Microwave Integrated Circuits Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	153-156
Number of pages	4
ISBN (Electronic)	9782874870446
DOIs	https://doi.org/10.1109/eumic.2016.7777513
State	Published - 7 Dec 2016
Externally published	Yes
Event	11th European Microwave Integrated Circuits Conference, EuMIC 2016 - London, United Kingdom Duration: 3 Oct 2016 → 4 Oct 2016

Publication series

Name	EuMIC 2016 - 11th European Microwave Integrated Circuits Conference

Conference

Conference	11th European Microwave Integrated Circuits Conference, EuMIC 2016
Country/Territory	United Kingdom
City	London
Period	3/10/16 → 4/10/16

Bibliographical note

Publisher Copyright:
© 2016 European Microwave Association.

Keywords

Gallium nitride (GaN)
high electron mobility transistor (HEMT)
small signal equivalent circuit
traps

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10.1109/eumic.2016.7777513

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Sánchez-Martín, H., García-Pérez, Ó., Iñiguez-De-La-Torre, I., Pérez, S., González, T., Mateos, J., Altuntas, P., Defrance, N., Lesecq, M., Hoel, V., Cordier, Y., & Rennesson, S. (2016). Characterization and modeling of traps and RF frequency dispersion in AlGaN/AlN/GaN HEMTs. In EuMIC 2016 - 11th European Microwave Integrated Circuits Conference (pp. 153-156). Article 7777513 (EuMIC 2016 - 11th European Microwave Integrated Circuits Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/eumic.2016.7777513

Sánchez-Martín, Héctor ; García-Pérez, Óscar ; Iñiguez-De-La-Torre, Ignacio et al. / Characterization and modeling of traps and RF frequency dispersion in AlGaN/AlN/GaN HEMTs. EuMIC 2016 - 11th European Microwave Integrated Circuits Conference. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 153-156 (EuMIC 2016 - 11th European Microwave Integrated Circuits Conference).

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abstract = "The performance of GaN transistors is still limited by physical and fabrication problems, mainly related to different kinds of traps. In this work, virgin transistors reveals strong low frequency dispersion both in the transconductance and output conductance, that we attribute to the presence of traps in the GaN channel and the ohmic contacts. These effects have been modeled in the equivalent circuit of the transistors achieving a satisfactory agreement with the measured S-parameters.",

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doi = "10.1109/eumic.2016.7777513",

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Sánchez-Martín, H, García-Pérez, Ó, Iñiguez-De-La-Torre, I, Pérez, S, González, T, Mateos, J, Altuntas, P, Defrance, N, Lesecq, M, Hoel, V, Cordier, Y & Rennesson, S 2016, Characterization and modeling of traps and RF frequency dispersion in AlGaN/AlN/GaN HEMTs. in EuMIC 2016 - 11th European Microwave Integrated Circuits Conference., 7777513, EuMIC 2016 - 11th European Microwave Integrated Circuits Conference, Institute of Electrical and Electronics Engineers Inc., pp. 153-156, 11th European Microwave Integrated Circuits Conference, EuMIC 2016, London, United Kingdom, 3/10/16. https://doi.org/10.1109/eumic.2016.7777513

Characterization and modeling of traps and RF frequency dispersion in AlGaN/AlN/GaN HEMTs. / Sánchez-Martín, Héctor; García-Pérez, Óscar; Iñiguez-De-La-Torre, Ignacio et al.
EuMIC 2016 - 11th European Microwave Integrated Circuits Conference. Institute of Electrical and Electronics Engineers Inc., 2016. p. 153-156 7777513 (EuMIC 2016 - 11th European Microwave Integrated Circuits Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Pérez, Susana

AU - González, Tomás

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AU - Altuntas, Philippe

AU - Defrance, Nicolas

AU - Lesecq, Marie

AU - Hoel, Virginie

AU - Cordier, Yvon

AU - Rennesson, Stéphanie

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Sánchez-Martín H, García-Pérez Ó, Iñiguez-De-La-Torre I, Pérez S, González T, Mateos J et al. Characterization and modeling of traps and RF frequency dispersion in AlGaN/AlN/GaN HEMTs. In EuMIC 2016 - 11th European Microwave Integrated Circuits Conference. Institute of Electrical and Electronics Engineers Inc. 2016. p. 153-156. 7777513. (EuMIC 2016 - 11th European Microwave Integrated Circuits Conference). doi: 10.1109/eumic.2016.7777513

Characterization and modeling of traps and RF frequency dispersion in AlGaN/AlN/GaN HEMTs

Abstract

Publication series

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Bibliographical note

Keywords

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