Characteristics of ultraviolet-assisted pulsed laser deposited thin oxide films

Keyphrases

• Pulsed Laser 100%
• Thin Oxide Films 100%
• Ultraviolet-assisted 100%
• Pulsed Laser Deposition 66%
• Substrate Temperature 66%
• Ultraviolet Photon 66%
• In Situ 33%
• Deposited Film 33%
• Stoichiometry 33%
• Growth Conditions 33%
• Optical Properties 33%
• Beneficial Effects 33%
• Crystal Growth 33%
• Electrical Properties 33%
• UV Illumination 33%
• Crystal Quality 33%
• In-situ Cleaning 33%
• Photodissociation 33%
• Low Substrate Temperature 33%
• Atomic Oxygen 33%
• Physisorbed 33%
• Crystalline Properties 33%
• Adatoms 33%
• UV-assisted 33%
• Yttrium Oxide 33%
• UV-ozone 33%
• Gaseous Species 33%
• Ba0.5Sr0.5TiO3 33%
• Molecular O2 33%
• Surface Mobility 33%
• Optimized Growth 33%
• Deep Ultraviolet 33%

Engineering

• Pulsed Laser 100%
• Oxide Film 100%
• Substrate Temperature 75%
• Crystal Growth 25%
• Deposited Film 25%
• Crystalline Quality 25%
• Beneficial Effect 25%
• Growth Condition 25%
• Gaseous Specie 25%

Material Science

• Film 100%
• Pulsed Laser Deposition 100%
• Oxide Film 100%
• ZnO 20%
• Optical Property 20%
• Crystalline Material 20%
• Crystal Growth 20%