TY - JOUR
T1 - Characteristics of Ba0.5Sr0.5TiO3 thin films grown by ultraviolet-assisted pulsed laser deposition
AU - Craciun, V.
AU - Srivastava, A.
AU - Howard, J. M.
AU - Singh, R. K.
AU - Perriere, J.
PY - 1999
Y1 - 1999
N2 - The microstructure and properties of barium strontium titanate (BST) thin films grown by an in situ ultraviolet-assisted (UV-assisted) pulsed laser deposition (UVPLD) technique are reported in this paper. In comparison with BST films grown by conventional pulsed laser deposition (PLD) under similar conditions, but without UV illumination, the UVPLD-grown films exhibited improved structural, electrical, and optical properties. X-ray photoelectron spectroscopy showed that when exposed to atmosphere, Ba atoms from the outermost layers formed a thin layer of barium carbonate, which negatively affects the film electrical characteristics. UVPLD-grown films exhibited a smaller amount of Ba atoms within the carbonate layer, resulting in better electrical characteristics. The dielectric constant of 40-nm-thick films deposited at 650°C by UVPLD and PLD were determined to be 281 and 172, respectively. The leakage current density of the UVPLD-grown films was in the mid-10-8 A/cm2 range, a factor of 2 lower than that obtained from PLD-grown films.
AB - The microstructure and properties of barium strontium titanate (BST) thin films grown by an in situ ultraviolet-assisted (UV-assisted) pulsed laser deposition (UVPLD) technique are reported in this paper. In comparison with BST films grown by conventional pulsed laser deposition (PLD) under similar conditions, but without UV illumination, the UVPLD-grown films exhibited improved structural, electrical, and optical properties. X-ray photoelectron spectroscopy showed that when exposed to atmosphere, Ba atoms from the outermost layers formed a thin layer of barium carbonate, which negatively affects the film electrical characteristics. UVPLD-grown films exhibited a smaller amount of Ba atoms within the carbonate layer, resulting in better electrical characteristics. The dielectric constant of 40-nm-thick films deposited at 650°C by UVPLD and PLD were determined to be 281 and 172, respectively. The leakage current density of the UVPLD-grown films was in the mid-10-8 A/cm2 range, a factor of 2 lower than that obtained from PLD-grown films.
UR - http://www.scopus.com/inward/record.url?scp=25844484063&partnerID=8YFLogxK
U2 - 10.1007/s003390051530
DO - 10.1007/s003390051530
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AN - SCOPUS:25844484063
SN - 0947-8396
VL - 69
SP - S787-S789
JO - Applied Physics A: Materials Science and Processing
JF - Applied Physics A: Materials Science and Processing
IS - 7
ER -