CdS/CuInSe//2 HETEROJUNCTION CELL RESEARCH.

The objective of this research is to fabricate and characterize CuInSe//2 thin films and solar cells. The material can be deposited either n- or p-type with mobilities of up to 150 cm**2 /V s and carrier concentrations ranging from 10**1 **3- 10**2 **0 cm** minus **3. X-ray diffraction reveals a single phase with strong preferred orientation along LT AN BR 211 RT AN BR and LT AN BR 112 RT AN BR directions. The basic device structure of the cell consists of two CuInSe//2 layers, varying in the stoichiometry of elements and electrical properties, and two layers of CdS. Composition studies as well as electrical properties measurements were carried out to illustrate the role of the two layers of CuInSe//2. The methods used and the results are discussed and a conclusion is drawn as to whether the two layers in an actual device can be eliminated by using a single layer of intermediate composition and electrical properties.