Cathodoluminescence studies of gamma-irradiation effects on AlGaN/GaN high electron mobility transistors (HEMTs)

A. Yadav; M. Antia; E. Flitsiyan; L. Chernyak; I. Lubomirsky; J. Salzman

doi:10.1149/06914.0137ecst

Cathodoluminescence studies of gamma-irradiation effects on AlGaN/GaN high electron mobility transistors (HEMTs)

A. Yadav, M. Antia, E. Flitsiyan, L. Chernyak, I. Lubomirsky, J. Salzman

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The effects of ⁶⁰Co gamma-irradiation on AlGaN/GaN High Electron Mobility Transistors (HEMTs) were studied by means of temperature dependent Cathodoluminescence (CL). The CL spectra were examined for several devices with radiation exposures of gamma-ray doses up to 1000 Gy, and for temperature ranging from 25°C to 125°C. Gamma-irradiation causes the CL intensity of HEMTs to decrease by creating defects that act as non-radiative recombination centers. The activation energy was observed to decrease as dosage was incremented to 200 Gy. The decrease in activation energy is related to Compton electron induced increase in carrier lifetime. However for doses above 200 Gy, the activation energy increases as the dose increases. This behavior could be explained by the formation of large electrically active defect complexes through the addition of new radiation defects to the defects formed at low doses.

Original language	English
Title of host publication	State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 58
Editors	J. H. He, C. O'Dwyer, F. Ren, E. Douglas, C. Jagadish, S. Jang, Y. L. Wang, R. P. Lynch, T. J. Anderson, J. K. Hite
Publisher	Electrochemical Society Inc.
Pages	137-144
Number of pages	8
Edition	14
ISBN (Electronic)	9781607685395
DOIs	https://doi.org/10.1149/06914.0137ecst
State	Published - 2015
Externally published	Yes
Event	Symposium on State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 2015 - 228th ECS Meeting - Phoenix, United States Duration: 11 Oct 2015 → 15 Oct 2015

Publication series

Name	ECS Transactions
Number	14
Volume	69
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Conference

Conference	Symposium on State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 2015 - 228th ECS Meeting
Country/Territory	United States
City	Phoenix
Period	11/10/15 → 15/10/15

Bibliographical note

Publisher Copyright:
© 2015 The Electrochemical Society.

Access to Document

10.1149/06914.0137ecst

Cite this

Yadav, A., Antia, M., Flitsiyan, E., Chernyak, L., Lubomirsky, I., & Salzman, J. (2015). Cathodoluminescence studies of gamma-irradiation effects on AlGaN/GaN high electron mobility transistors (HEMTs). In J. H. He, C. O'Dwyer, F. Ren, E. Douglas, C. Jagadish, S. Jang, Y. L. Wang, R. P. Lynch, T. J. Anderson, & J. K. Hite (Eds.), State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 58 (14 ed., pp. 137-144). (ECS Transactions; Vol. 69, No. 14). Electrochemical Society Inc.. https://doi.org/10.1149/06914.0137ecst

Yadav, A. ; Antia, M. ; Flitsiyan, E. et al. / Cathodoluminescence studies of gamma-irradiation effects on AlGaN/GaN high electron mobility transistors (HEMTs). State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 58. editor / J. H. He ; C. O'Dwyer ; F. Ren ; E. Douglas ; C. Jagadish ; S. Jang ; Y. L. Wang ; R. P. Lynch ; T. J. Anderson ; J. K. Hite. 14. ed. Electrochemical Society Inc., 2015. pp. 137-144 (ECS Transactions; 14).

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title = "Cathodoluminescence studies of gamma-irradiation effects on AlGaN/GaN high electron mobility transistors (HEMTs)",

abstract = "The effects of 60Co gamma-irradiation on AlGaN/GaN High Electron Mobility Transistors (HEMTs) were studied by means of temperature dependent Cathodoluminescence (CL). The CL spectra were examined for several devices with radiation exposures of gamma-ray doses up to 1000 Gy, and for temperature ranging from 25°C to 125°C. Gamma-irradiation causes the CL intensity of HEMTs to decrease by creating defects that act as non-radiative recombination centers. The activation energy was observed to decrease as dosage was incremented to 200 Gy. The decrease in activation energy is related to Compton electron induced increase in carrier lifetime. However for doses above 200 Gy, the activation energy increases as the dose increases. This behavior could be explained by the formation of large electrically active defect complexes through the addition of new radiation defects to the defects formed at low doses.",

author = "A. Yadav and M. Antia and E. Flitsiyan and L. Chernyak and I. Lubomirsky and J. Salzman",

note = "Publisher Copyright: {\textcopyright} 2015 The Electrochemical Society.; Symposium on State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 2015 - 228th ECS Meeting ; Conference date: 11-10-2015 Through 15-10-2015",

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doi = "10.1149/06914.0137ecst",

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Yadav, A, Antia, M, Flitsiyan, E, Chernyak, L, Lubomirsky, I & Salzman, J 2015, Cathodoluminescence studies of gamma-irradiation effects on AlGaN/GaN high electron mobility transistors (HEMTs). in JH He, C O'Dwyer, F Ren, E Douglas, C Jagadish, S Jang, YL Wang, RP Lynch, TJ Anderson & JK Hite (eds), State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 58. 14 edn, ECS Transactions, no. 14, vol. 69, Electrochemical Society Inc., pp. 137-144, Symposium on State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 2015 - 228th ECS Meeting, Phoenix, United States, 11/10/15. https://doi.org/10.1149/06914.0137ecst

Cathodoluminescence studies of gamma-irradiation effects on AlGaN/GaN high electron mobility transistors (HEMTs). / Yadav, A.; Antia, M.; Flitsiyan, E. et al.
State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 58. ed. / J. H. He; C. O'Dwyer; F. Ren; E. Douglas; C. Jagadish; S. Jang; Y. L. Wang; R. P. Lynch; T. J. Anderson; J. K. Hite. 14. ed. Electrochemical Society Inc., 2015. p. 137-144 (ECS Transactions; Vol. 69, No. 14).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Yadav, A.

AU - Antia, M.

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AU - Chernyak, L.

AU - Lubomirsky, I.

AU - Salzman, J.

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N2 - The effects of 60Co gamma-irradiation on AlGaN/GaN High Electron Mobility Transistors (HEMTs) were studied by means of temperature dependent Cathodoluminescence (CL). The CL spectra were examined for several devices with radiation exposures of gamma-ray doses up to 1000 Gy, and for temperature ranging from 25°C to 125°C. Gamma-irradiation causes the CL intensity of HEMTs to decrease by creating defects that act as non-radiative recombination centers. The activation energy was observed to decrease as dosage was incremented to 200 Gy. The decrease in activation energy is related to Compton electron induced increase in carrier lifetime. However for doses above 200 Gy, the activation energy increases as the dose increases. This behavior could be explained by the formation of large electrically active defect complexes through the addition of new radiation defects to the defects formed at low doses.

AB - The effects of 60Co gamma-irradiation on AlGaN/GaN High Electron Mobility Transistors (HEMTs) were studied by means of temperature dependent Cathodoluminescence (CL). The CL spectra were examined for several devices with radiation exposures of gamma-ray doses up to 1000 Gy, and for temperature ranging from 25°C to 125°C. Gamma-irradiation causes the CL intensity of HEMTs to decrease by creating defects that act as non-radiative recombination centers. The activation energy was observed to decrease as dosage was incremented to 200 Gy. The decrease in activation energy is related to Compton electron induced increase in carrier lifetime. However for doses above 200 Gy, the activation energy increases as the dose increases. This behavior could be explained by the formation of large electrically active defect complexes through the addition of new radiation defects to the defects formed at low doses.

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PB - Electrochemical Society Inc.

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Yadav A, Antia M, Flitsiyan E, Chernyak L, Lubomirsky I, Salzman J. Cathodoluminescence studies of gamma-irradiation effects on AlGaN/GaN high electron mobility transistors (HEMTs). In He JH, O'Dwyer C, Ren F, Douglas E, Jagadish C, Jang S, Wang YL, Lynch RP, Anderson TJ, Hite JK, editors, State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 58. 14 ed. Electrochemical Society Inc. 2015. p. 137-144. (ECS Transactions; 14). doi: 10.1149/06914.0137ecst

Cathodoluminescence studies of gamma-irradiation effects on AlGaN/GaN high electron mobility transistors (HEMTs)

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