Carrier transport effects on the photocurrent spectra of an intrinsic GaAs/AlGaAs multiple quantum well with highly doped AlGaAs contact layers

A. J. Shields, P. C. Klipstein, G. W. Smith, D. R.P. Guy, N. Apsley

Research output: Contribution to journalArticlepeer-review

Abstract

In this study, we demonstrate how electroreflectance (ER) measurements as a function of bias, and of angle of incidence (θ0), together with bias dependent photocurrent (PC) measurements, can be used to provide understanding of the complex electric field profile and carrier transport effects in a GaAs/Al0.3Ga0.7As multiple quantum well (MQW), grown inside n+ contact layers. The PC measurements exhibit split excitonic features, the components of which change in strength with the applied bias. The effect is explained by absorption in the front of the MQW stack, with the back of the stack acting as detector. We examine the θ0-dependence of the ER lineshape, to determine the depth of the layers responsible for each feature. The ER and PC lineshapes and their bias dependence are explained by the unusual electric field profile across the stack. The field profile appears to be determined by tunnelling of the dark current.

Original languageEnglish
Pages (from-to)403-408
Number of pages6
JournalSuperlattices and Microstructures
Volume7
Issue number4
DOIs
StatePublished - 1990
Externally publishedYes

Bibliographical note

Funding Information:
Acknowledgements - We are most grateful to G.Honnington of RSRE, Walvern for processing the sample. This work was funded by the Science and Engineering Research Council (U.K.). A.J.S. also thanks Dept. of Educ. N.Ireland and RSRE for financial support.

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