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Carrier Leakage Dynamics in Terahertz Quantum Cascade Lasers
Asaf Albo
, Yuri V. Flores
Bar-Ilan University - The Alexander Kofkin Faculty of Engineering
BINA Research Center - Nano Materials
BINA Research Center - Nano-Photonics
NanoElectronics - The Emerging Nanoscaled Integrated Circuits & Systems (EnICS) Labs
QUEST - The Quantum Entanglement Science&Technology Impact Center
Massachusetts Institute of Technology
Research output
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Contribution to journal
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Article
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peer-review
22
Scopus citations
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Keyphrases
Terahertz Quantum Cascade Laser
100%
Carrier Leakage
100%
Laser Leveling
66%
Tmax
66%
Gallium Arsenide
50%
Power Output
33%
Thermally Activated Processes
33%
High Barrier
33%
Laser Performance
33%
Leakage Path
33%
Performance Degradation
16%
Operation Range
16%
Design Strategy
16%
Temperature Profile
16%
Maximum Operation Temperature
16%
Temperature Rise
16%
Temperature Sensitivity
16%
Laser Micromachining
16%
Troubleshooting
16%
Non-radial
16%
Laser Operation
16%
Temperature Characteristics
16%
Thin Barrier
16%
Phonon Emission
16%
LO Phonon
16%
Scattering Path
16%
Straightforward Method
16%
Electron Leakage
16%
Barrier Device
16%
Active Region Design
16%
Engineering
Terahertz
100%
Carrier Leakage
100%
Gallium Arsenide
50%
Output Power
33%
Laser Performance
33%
Performance Degradation
16%
Straightforward Method
16%
Active Region
16%
Temperature Increase
16%
Maximum Operating Temperature
16%
Range Operation
16%
Temperature Profile
16%
Future Design
16%
Physics
Quantum Cascade Lasers
100%
Temperature Characteristics
16%
Operating Temperature
16%
Phonon
16%
Temperature Profile
16%
Material Science
Gallium Arsenide
100%