Carrier capture times in 1.5 μm multiple quantum well optical amplifiers

S. Weiss, J. M. Wiesenfeld, D. S. Chemla, G. Raybon, G. Sucha, M. Wegener, G. Eisenstein, C. A. Burrus, A. G. Dentai, U. Koren, B. I. Miller, H. Temkin, R. A. Logan, T. Tanbun-Ek

Research output: Contribution to journalArticlepeer-review

73 Scopus citations


The carrier capture times in multiple quantum well semiconductor amplifiers of different structures are studied under high plasma density conditions. Fast (<1 ps), slow (≳150 ps), and intermediate time constants (2-7 ps) are identified in InGaAs quantum well structures. The intermediate time constant is attributed to carrier diffusion in the cladding layers and identified as the carrier capture time. Short capture times can be achieved by proper design of the device structure.

Original languageEnglish
Pages (from-to)9-11
Number of pages3
JournalApplied Physics Letters
Issue number1
StatePublished - 1992
Externally publishedYes


Dive into the research topics of 'Carrier capture times in 1.5 μm multiple quantum well optical amplifiers'. Together they form a unique fingerprint.

Cite this