Carrier capture times in 1.5 μm multiple quantum well optical amplifiers

S. Weiss; J. M. Wiesenfeld; D. S. Chemla; G. Raybon; G. Sucha; M. Wegener; G. Eisenstein; C. A. Burrus; A. G. Dentai; U. Koren; B. I. Miller; H. Temkin; R. A. Logan; T. Tanbun-Ek

doi:10.1063/1.107426

Carrier capture times in 1.5 μm multiple quantum well optical amplifiers

S. Weiss, J. M. Wiesenfeld, D. S. Chemla, G. Raybon, G. Sucha, M. Wegener, G. Eisenstein, C. A. Burrus, A. G. Dentai, U. Koren, B. I. Miller, H. Temkin, R. A. Logan, T. Tanbun-Ek

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Abstract

The carrier capture times in multiple quantum well semiconductor amplifiers of different structures are studied under high plasma density conditions. Fast (<1 ps), slow (≳150 ps), and intermediate time constants (2-7 ps) are identified in InGaAs quantum well structures. The intermediate time constant is attributed to carrier diffusion in the cladding layers and identified as the carrier capture time. Short capture times can be achieved by proper design of the device structure.

Original language	English
Pages (from-to)	9-11
Number of pages	3
Journal	Applied Physics Letters
Volume	60
Issue number	1
DOIs	https://doi.org/10.1063/1.107426
State	Published - 1992
Externally published	Yes

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title = "Carrier capture times in 1.5 μm multiple quantum well optical amplifiers",

abstract = "The carrier capture times in multiple quantum well semiconductor amplifiers of different structures are studied under high plasma density conditions. Fast (<1 ps), slow (≳150 ps), and intermediate time constants (2-7 ps) are identified in InGaAs quantum well structures. The intermediate time constant is attributed to carrier diffusion in the cladding layers and identified as the carrier capture time. Short capture times can be achieved by proper design of the device structure.",

author = "S. Weiss and Wiesenfeld, {J. M.} and Chemla, {D. S.} and G. Raybon and G. Sucha and M. Wegener and G. Eisenstein and Burrus, {C. A.} and Dentai, {A. G.} and U. Koren and Miller, {B. I.} and H. Temkin and Logan, {R. A.} and T. Tanbun-Ek",

year = "1992",

doi = "10.1063/1.107426",

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AU - Weiss, S.

AU - Wiesenfeld, J. M.

AU - Chemla, D. S.

AU - Raybon, G.

AU - Sucha, G.

AU - Wegener, M.

AU - Eisenstein, G.

AU - Burrus, C. A.

AU - Dentai, A. G.

AU - Koren, U.

AU - Miller, B. I.

AU - Temkin, H.

AU - Logan, R. A.

AU - Tanbun-Ek, T.

PY - 1992

Y1 - 1992

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AB - The carrier capture times in multiple quantum well semiconductor amplifiers of different structures are studied under high plasma density conditions. Fast (<1 ps), slow (≳150 ps), and intermediate time constants (2-7 ps) are identified in InGaAs quantum well structures. The intermediate time constant is attributed to carrier diffusion in the cladding layers and identified as the carrier capture time. Short capture times can be achieved by proper design of the device structure.

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Carrier capture times in 1.5 μm multiple quantum well optical amplifiers

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