Abstract
Capacitance based spectroscopic techniques have been used to characterize defects in organic Schottky diode based on copper phthalocyanine. Deep traps in organic thin films introduced by varying growth conditions have been identified and characterized by voltage and temperature dependence of capacitance. These results are interpreted using a consistent modelling of capacitance of organic Schottky diode with and without deep traps.
| Original language | English |
|---|---|
| Article number | 023301 |
| Journal | Applied Physics Letters |
| Volume | 99 |
| Issue number | 2 |
| DOIs | |
| State | Published - 11 Jul 2011 |
| Externally published | Yes |
Bibliographical note
Funding Information:A.S, P.K., and B.S. thank CSIR, India, for the financial support through fellowship. This work was partly supported by DST, Government of India.
Funding
A.S, P.K., and B.S. thank CSIR, India, for the financial support through fellowship. This work was partly supported by DST, Government of India.
| Funders |
|---|
| Council of Scientific and Industrial Research, India |
| Department of Science and Technology, Government of West Bengal |
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