Capacitance-voltage characteristics of organic Schottky diode with and without deep traps

Akanksha Sharma; Pramod Kumar; Budhi Singh; Sumita Ray Chaudhuri; Subhasis Ghosh

doi:10.1063/1.3607955

Capacitance-voltage characteristics of organic Schottky diode with and without deep traps

Akanksha Sharma, Pramod Kumar, Budhi Singh, Sumita Ray Chaudhuri, Subhasis Ghosh

Research output: Contribution to journal › Article › peer-review

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Abstract

Capacitance based spectroscopic techniques have been used to characterize defects in organic Schottky diode based on copper phthalocyanine. Deep traps in organic thin films introduced by varying growth conditions have been identified and characterized by voltage and temperature dependence of capacitance. These results are interpreted using a consistent modelling of capacitance of organic Schottky diode with and without deep traps.

Original language	English
Article number	023301
Journal	Applied Physics Letters
Volume	99
Issue number	2
DOIs	https://doi.org/10.1063/1.3607955
State	Published - 11 Jul 2011
Externally published	Yes

Bibliographical note

Funding Information:
A.S, P.K., and B.S. thank CSIR, India, for the financial support through fellowship. This work was partly supported by DST, Government of India.

Funding

A.S, P.K., and B.S. thank CSIR, India, for the financial support through fellowship. This work was partly supported by DST, Government of India.

Funders	Funder number
Council of Scientific and Industrial Research, India
Department of Science and Technology, Government of West Bengal

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Capacitance-voltage characteristics of organic Schottky diode with and without deep traps

Abstract

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