Capacitance-voltage characteristics of organic Schottky diode with and without deep traps

Akanksha Sharma, Pramod Kumar, Budhi Singh, Sumita Ray Chaudhuri, Subhasis Ghosh

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71 Scopus citations

Abstract

Capacitance based spectroscopic techniques have been used to characterize defects in organic Schottky diode based on copper phthalocyanine. Deep traps in organic thin films introduced by varying growth conditions have been identified and characterized by voltage and temperature dependence of capacitance. These results are interpreted using a consistent modelling of capacitance of organic Schottky diode with and without deep traps.

Original languageEnglish
Article number023301
JournalApplied Physics Letters
Volume99
Issue number2
DOIs
StatePublished - 11 Jul 2011
Externally publishedYes

Bibliographical note

Funding Information:
A.S, P.K., and B.S. thank CSIR, India, for the financial support through fellowship. This work was partly supported by DST, Government of India.

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