Calculation and experimental characterization of the defect physics in CuInSe2

Jochen Klais; Hans Joachim Möller; David Cahen

doi:10.1016/s0040-6090(99)00814-7

Calculation and experimental characterization of the defect physics in CuInSe₂

Jochen Klais
, Hans Joachim Möller
, David Cahen

Research output: Contribution to journal › Conference article › peer-review

7 Scopus citations

Abstract

Numerical simulations of the defect distribution of CuInSe₂ were carried out as a function of the stoichiometry. The simulations are based on a new calculation of the intrinsic defects in this material. The results of the calculations were compared with earlier electrical and positron lifetime measurements. This leads to the assumption, that the single defects V_Se, V_Cu, Cu_In and the defect pair (2V_Cu-In_Cu) occur in the investigated specimens in considerable concentrations.

Original language	English
Pages (from-to)	446-449
Number of pages	4
Journal	Thin Solid Films
Volume	361
DOIs	https://doi.org/10.1016/s0040-6090(99)00814-7
State	Published - 21 Feb 2000
Externally published	Yes
Event	The 1999 E-MRS Spring Conference, Symposium O: Chalcogenide Semicondutors for Photovoltaics - Strasbourg, France Duration: 1 Jun 1999 → 4 Jun 1999

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10.1016/s0040-6090(99)00814-7

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title = "Calculation and experimental characterization of the defect physics in CuInSe2",

abstract = "Numerical simulations of the defect distribution of CuInSe2 were carried out as a function of the stoichiometry. The simulations are based on a new calculation of the intrinsic defects in this material. The results of the calculations were compared with earlier electrical and positron lifetime measurements. This leads to the assumption, that the single defects VSe, VCu, CuIn and the defect pair (2VCu-InCu) occur in the investigated specimens in considerable concentrations.",

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T1 - Calculation and experimental characterization of the defect physics in CuInSe2

AU - Klais, Jochen

AU - Möller, Hans Joachim

AU - Cahen, David

PY - 2000/2/21

Y1 - 2000/2/21

N2 - Numerical simulations of the defect distribution of CuInSe2 were carried out as a function of the stoichiometry. The simulations are based on a new calculation of the intrinsic defects in this material. The results of the calculations were compared with earlier electrical and positron lifetime measurements. This leads to the assumption, that the single defects VSe, VCu, CuIn and the defect pair (2VCu-InCu) occur in the investigated specimens in considerable concentrations.

AB - Numerical simulations of the defect distribution of CuInSe2 were carried out as a function of the stoichiometry. The simulations are based on a new calculation of the intrinsic defects in this material. The results of the calculations were compared with earlier electrical and positron lifetime measurements. This leads to the assumption, that the single defects VSe, VCu, CuIn and the defect pair (2VCu-InCu) occur in the investigated specimens in considerable concentrations.

UR - https://www.scopus.com/pages/publications/0008967724

U2 - 10.1016/s0040-6090(99)00814-7

DO - 10.1016/s0040-6090(99)00814-7

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AN - SCOPUS:0008967724

SN - 0040-6090

VL - 361

SP - 446

EP - 449

JO - Thin Solid Films

JF - Thin Solid Films

T2 - The 1999 E-MRS Spring Conference, Symposium O: Chalcogenide Semicondutors for Photovoltaics

Y2 - 1 June 1999 through 4 June 1999

ER -

Calculation and experimental characterization of the defect physics in CuInSe₂

Abstract

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