TY - JOUR
T1 - Calculation and experimental characterization of the defect physics in CuInSe2
AU - Klais, Jochen
AU - Möller, Hans Joachim
AU - Cahen, David
PY - 2000/2/21
Y1 - 2000/2/21
N2 - Numerical simulations of the defect distribution of CuInSe2 were carried out as a function of the stoichiometry. The simulations are based on a new calculation of the intrinsic defects in this material. The results of the calculations were compared with earlier electrical and positron lifetime measurements. This leads to the assumption, that the single defects VSe, VCu, CuIn and the defect pair (2VCu-InCu) occur in the investigated specimens in considerable concentrations.
AB - Numerical simulations of the defect distribution of CuInSe2 were carried out as a function of the stoichiometry. The simulations are based on a new calculation of the intrinsic defects in this material. The results of the calculations were compared with earlier electrical and positron lifetime measurements. This leads to the assumption, that the single defects VSe, VCu, CuIn and the defect pair (2VCu-InCu) occur in the investigated specimens in considerable concentrations.
UR - http://www.scopus.com/inward/record.url?scp=0008967724&partnerID=8YFLogxK
U2 - 10.1016/s0040-6090(99)00814-7
DO - 10.1016/s0040-6090(99)00814-7
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AN - SCOPUS:0008967724
SN - 0040-6090
VL - 361
SP - 446
EP - 449
JO - Thin Solid Films
JF - Thin Solid Films
T2 - The 1999 E-MRS Spring Conference, Symposium O: Chalcogenide Semicondutors for Photovoltaics
Y2 - 1 June 1999 through 4 June 1999
ER -