Calculation and experimental characterization of the defect physics in CuInSe2

Jochen Klais, Hans Joachim Möller, David Cahen

Research output: Contribution to journalConference articlepeer-review

7 Scopus citations


Numerical simulations of the defect distribution of CuInSe2 were carried out as a function of the stoichiometry. The simulations are based on a new calculation of the intrinsic defects in this material. The results of the calculations were compared with earlier electrical and positron lifetime measurements. This leads to the assumption, that the single defects VSe, VCu, CuIn and the defect pair (2VCu-InCu) occur in the investigated specimens in considerable concentrations.

Original languageEnglish
Pages (from-to)446-449
Number of pages4
JournalThin Solid Films
StatePublished - 21 Feb 2000
Externally publishedYes
EventThe 1999 E-MRS Spring Conference, Symposium O: Chalcogenide Semicondutors for Photovoltaics - Strasbourg, France
Duration: 1 Jun 19994 Jun 1999


Dive into the research topics of 'Calculation and experimental characterization of the defect physics in CuInSe2'. Together they form a unique fingerprint.

Cite this