Broad-Area Photodectrochemical Etching of n-Type Beta-SiC

Joseph S. Shor; Richard M. Osgood

doi:10.1149/1.2220722

Broad-Area Photodectrochemical Etching of n-Type Beta-SiC

Joseph S. Shor, Richard M. Osgood

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

Water-scale etching of β-SiC is demonstrated using UV-lamp-assisted photoelectrochemical etching in conjunction with photolitho-graphicaily defined masks. The process exhibits high etch rates and dopant selectivity, features not available using other SiC etching methods.

Original language	English
Pages (from-to)	L123-L125
Journal	Journal of the Electrochemical Society
Volume	140
Issue number	8
DOIs	https://doi.org/10.1149/1.2220722
State	Published - Aug 1993
Externally published	Yes

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title = "Broad-Area Photodectrochemical Etching of n-Type Beta-SiC",

abstract = "Water-scale etching of β-SiC is demonstrated using UV-lamp-assisted photoelectrochemical etching in conjunction with photolitho-graphicaily defined masks. The process exhibits high etch rates and dopant selectivity, features not available using other SiC etching methods.",

author = "Shor, {Joseph S.} and Osgood, {Richard M.}",

year = "1993",

month = aug,

doi = "10.1149/1.2220722",

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AU - Shor, Joseph S.

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AB - Water-scale etching of β-SiC is demonstrated using UV-lamp-assisted photoelectrochemical etching in conjunction with photolitho-graphicaily defined masks. The process exhibits high etch rates and dopant selectivity, features not available using other SiC etching methods.

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JO - Journal of the Electrochemical Society

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IS - 8

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Broad-Area Photodectrochemical Etching of n-Type Beta-SiC

Abstract

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