Abstract
The effect of swift heavy ion (72.5 MeV 58Ni6+) irradiation on Au/n-GaAs Schottky barrier characteristics is studied using in situ current-voltage measurements. Diode parameters are found to vary as a function of ion irradiation fluence. The Schottky barrier height (SBH) is found to be 0.55(±0.01) eV for the as deposited diode, which decreases with ion irradiation fluence. The SBH decreases to a value of 0.49(±0.01) eV at the highest ion irradiation fluence of 5 × 1013 ions cm-2. The ideality factor is found to be 2.48 for unirradiated diode, and it increases with irradiation to a value of 4.63 at the highest fluence. The modification in Schottky barrier characteristics is discussed considering the energy loss mechanism of swift heavy ion at the metal-semiconductor interface.
Original language | English |
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Pages (from-to) | 424-428 |
Number of pages | 5 |
Journal | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms |
Volume | 263 |
Issue number | 2 |
DOIs | |
State | Published - Oct 2007 |
Externally published | Yes |
Keywords
- Barrier height
- Ideality factor
- In situ I-V
- Ion irradiation
- Schottky diode