Barrier modification of Au/n-GaAs Schottky diode by swift heavy ion irradiation

A. T. Sharma, Shahnawaz, Sandeep Kumar, Y. S. Katharria, D. Kanjilal

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

The effect of swift heavy ion (72.5 MeV 58Ni6+) irradiation on Au/n-GaAs Schottky barrier characteristics is studied using in situ current-voltage measurements. Diode parameters are found to vary as a function of ion irradiation fluence. The Schottky barrier height (SBH) is found to be 0.55(±0.01) eV for the as deposited diode, which decreases with ion irradiation fluence. The SBH decreases to a value of 0.49(±0.01) eV at the highest ion irradiation fluence of 5 × 1013 ions cm-2. The ideality factor is found to be 2.48 for unirradiated diode, and it increases with irradiation to a value of 4.63 at the highest fluence. The modification in Schottky barrier characteristics is discussed considering the energy loss mechanism of swift heavy ion at the metal-semiconductor interface.

Original languageEnglish
Pages (from-to)424-428
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume263
Issue number2
DOIs
StatePublished - Oct 2007
Externally publishedYes

Keywords

  • Barrier height
  • Ideality factor
  • In situ I-V
  • Ion irradiation
  • Schottky diode

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