TY - JOUR
T1 - Barrier height modification of Au/n-Si Schottky structures by swift heavy ion irradiation
AU - Kumar, Sandeep
AU - Kanjilal, D.
PY - 2006/7
Y1 - 2006/7
N2 - Influence of 120 MeV 107Ag7+ ion irradiation on current-voltage (I-V) characteristics of Au/n-Si(1 0 0) Schottky diodes as a function of fluence is investigated. The irradiation fluence was varied from 5 × 1010 to 1 × 1013 ions cm-2. By systematically varying the ion fluence we can control the variations in various parameters of the Schottky diodes. The ideality factor increases from a value 1.1 to 1.3 with increasing fluence upto 5 × 1011 ions cm-2. After this as fluence increases to 5 × 1012 ions cm-2, ideality factor becomes 1.28. The Schottky barrier height (SBH) decreases from a value of 0.82 eV for the unirradiated diode to 0.72 eV for the diode irradiated with a fluence of 5 × 1010 ions cm-2. After this SBH increases to a value 0.77 eV and then remain constant upto a fluence 1 × 1013 ions cm-2. The basic energy loss mechanism of swift heavy ion (SHI) at the metal-semiconductor (MS) interface is used to explain the change in Schottky diode parameters. After an initial fluence of 5 × 1010 ions cm-2, the role of electronic energy loss in modification of interface states has been envisaged in relation to the immunity of SBH over a wide fluence range.
AB - Influence of 120 MeV 107Ag7+ ion irradiation on current-voltage (I-V) characteristics of Au/n-Si(1 0 0) Schottky diodes as a function of fluence is investigated. The irradiation fluence was varied from 5 × 1010 to 1 × 1013 ions cm-2. By systematically varying the ion fluence we can control the variations in various parameters of the Schottky diodes. The ideality factor increases from a value 1.1 to 1.3 with increasing fluence upto 5 × 1011 ions cm-2. After this as fluence increases to 5 × 1012 ions cm-2, ideality factor becomes 1.28. The Schottky barrier height (SBH) decreases from a value of 0.82 eV for the unirradiated diode to 0.72 eV for the diode irradiated with a fluence of 5 × 1010 ions cm-2. After this SBH increases to a value 0.77 eV and then remain constant upto a fluence 1 × 1013 ions cm-2. The basic energy loss mechanism of swift heavy ion (SHI) at the metal-semiconductor (MS) interface is used to explain the change in Schottky diode parameters. After an initial fluence of 5 × 1010 ions cm-2, the role of electronic energy loss in modification of interface states has been envisaged in relation to the immunity of SBH over a wide fluence range.
KW - Electronic and nuclear energy loss
KW - I-V measurement
KW - Interface state density
KW - Schottky barrier diode
KW - Swift heavy ion irradiation
UR - http://www.scopus.com/inward/record.url?scp=33744946270&partnerID=8YFLogxK
U2 - 10.1016/j.nimb.2006.03.174
DO - 10.1016/j.nimb.2006.03.174
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AN - SCOPUS:33744946270
SN - 0168-583X
VL - 248
SP - 109
EP - 112
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
IS - 1
ER -