Band gap engineering of cdte quantum dots by hg alloying in infrared region

Anurag Sahu; Shay Tirosh; Arie Zaban; Kirankumar Hiremath; Ambesh Dixit

doi:10.1007/978-3-319-97604-4_187

Band gap engineering of cdte quantum dots by hg alloying in infrared region

Anurag Sahu, Shay Tirosh, Arie Zaban, Kirankumar Hiremath, Ambesh Dixit

Department of Chemistry

Indian Institute of Technology Jodhpur

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We synthesized Hg alloyed CdTe quantum dots (Cd_1−xHg_xTe) using hydrothermal route. N-acetyl-cysteine is used as the capping agent for water dispersed Cd_1−xHg_xTe (x = 0, 0.05, 0.1 and 0.5) quantum dots. The diameter of the synthesized quantum dots is 3.8 ± 0.5 nm, as estimated from high resolution transmission electron micrographs. The mercury molar fraction modified band gap engineering is demonstrated with band gap changing from 2.5 eV for CdTe quantum dots to 1.25 eV for Cd_0.5Hg_0.5Te.

Original language	English
Title of host publication	The Physics of Semiconductor Devices - Proceedings of IWPSD 2017
Editors	R.K. Sharma, D.S. Rawal
Publisher	Springer Science and Business Media, LLC
Pages	1231-1234
Number of pages	4
ISBN (Print)	9783319976037
DOIs	https://doi.org/10.1007/978-3-319-97604-4_187
State	Published - 2019
Event	19th International Workshop on Physics of Semiconductor Devices, IWPSD 2017 - New Delhi, India Duration: 11 Dec 2017 → 15 Dec 2017

Publication series

Name	Springer Proceedings in Physics
Volume	215
ISSN (Print)	0930-8989
ISSN (Electronic)	1867-4941

Conference

Conference	19th International Workshop on Physics of Semiconductor Devices, IWPSD 2017
Country/Territory	India
City	New Delhi
Period	11/12/17 → 15/12/17

Bibliographical note

Publisher Copyright:
© Springer Nature Switzerland AG 2019.

Access to Document

10.1007/978-3-319-97604-4_187

Cite this

Sahu, A., Tirosh, S., Zaban, A., Hiremath, K., & Dixit, A. (2019). Band gap engineering of cdte quantum dots by hg alloying in infrared region. In R. K. Sharma, & D. S. Rawal (Eds.), The Physics of Semiconductor Devices - Proceedings of IWPSD 2017 (pp. 1231-1234). (Springer Proceedings in Physics; Vol. 215). Springer Science and Business Media, LLC. https://doi.org/10.1007/978-3-319-97604-4_187

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abstract = "We synthesized Hg alloyed CdTe quantum dots (Cd1−xHgxTe) using hydrothermal route. N-acetyl-cysteine is used as the capping agent for water dispersed Cd1−xHgxTe (x = 0, 0.05, 0.1 and 0.5) quantum dots. The diameter of the synthesized quantum dots is 3.8 ± 0.5 nm, as estimated from high resolution transmission electron micrographs. The mercury molar fraction modified band gap engineering is demonstrated with band gap changing from 2.5 eV for CdTe quantum dots to 1.25 eV for Cd0.5Hg0.5Te.",

author = "Anurag Sahu and Shay Tirosh and Arie Zaban and Kirankumar Hiremath and Ambesh Dixit",

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Sahu, A, Tirosh, S, Zaban, A, Hiremath, K & Dixit, A 2019, Band gap engineering of cdte quantum dots by hg alloying in infrared region. in RK Sharma & DS Rawal (eds), The Physics of Semiconductor Devices - Proceedings of IWPSD 2017. Springer Proceedings in Physics, vol. 215, Springer Science and Business Media, LLC, pp. 1231-1234, 19th International Workshop on Physics of Semiconductor Devices, IWPSD 2017, New Delhi, India, 11/12/17. https://doi.org/10.1007/978-3-319-97604-4_187

Band gap engineering of cdte quantum dots by hg alloying in infrared region. / Sahu, Anurag; Tirosh, Shay; Zaban, Arie et al.
The Physics of Semiconductor Devices - Proceedings of IWPSD 2017. ed. / R.K. Sharma; D.S. Rawal. Springer Science and Business Media, LLC, 2019. p. 1231-1234 (Springer Proceedings in Physics; Vol. 215).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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Band gap engineering of cdte quantum dots by hg alloying in infrared region

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