Band diagram of the polycrystalline CdS/Cu(In,Ga)Se2 heterojunction

L. Kronik; L. Burstein; M. Leibovitch; Yoram Shapira; D. Gal; E. Moons; J. Beier; G. Hodes; David Cahen; D. Hariskos; R. Klenk; H. W. Schock

doi:10.1063/1.114508

Band diagram of the polycrystalline CdS/Cu(In,Ga)Se₂ heterojunction

L. Kronik
, L. Burstein
, M. Leibovitch
, Yoram Shapira
, D. Gal
, E. Moons
, J. Beier
, G. Hodes
, David Cahen
, D. Hariskos
, R. Klenk
, H. W. Schock

Research output: Contribution to journal › Article › peer-review

59 Scopus citations

Abstract

Contact potential difference measurements in the dark and under illumination are used to derive the conduction band offset (ΔE _c) in a solar cell quality junction formed by chemical bath deposition of CdS on a polycrystalline thin film of Cu(In,Ga)Se₂. Our experimental measurements and the estimates made for dipole contributions show that the junction is of type II, i.e., without a spike in the conduction band (ΔE_c=80 meV±100 meV). This is consistent with the high performance of the actual solar cell. However, it differs from most previous results on junctions based on single crystals and/or vacuum deposited CdS, which indicated the existence of a conduction band spike.

Original language	English
Pages (from-to)	1405
Number of pages	1
Journal	Applied Physics Letters
Volume	67
DOIs	https://doi.org/10.1063/1.114508
State	Published - 1995
Externally published	Yes

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title = "Band diagram of the polycrystalline CdS/Cu(In,Ga)Se2 heterojunction",

abstract = "Contact potential difference measurements in the dark and under illumination are used to derive the conduction band offset (ΔE c) in a solar cell quality junction formed by chemical bath deposition of CdS on a polycrystalline thin film of Cu(In,Ga)Se2. Our experimental measurements and the estimates made for dipole contributions show that the junction is of type II, i.e., without a spike in the conduction band (ΔEc=80 meV±100 meV). This is consistent with the high performance of the actual solar cell. However, it differs from most previous results on junctions based on single crystals and/or vacuum deposited CdS, which indicated the existence of a conduction band spike.",

author = "L. Kronik and L. Burstein and M. Leibovitch and Yoram Shapira and D. Gal and E. Moons and J. Beier and G. Hodes and David Cahen and D. Hariskos and R. Klenk and Schock, \{H. W.\}",

year = "1995",

doi = "10.1063/1.114508",

language = "אנגלית",

volume = "67",

pages = "1405",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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TY - JOUR

T1 - Band diagram of the polycrystalline CdS/Cu(In,Ga)Se2 heterojunction

AU - Kronik, L.

AU - Burstein, L.

AU - Leibovitch, M.

AU - Shapira, Yoram

AU - Gal, D.

AU - Moons, E.

AU - Beier, J.

AU - Hodes, G.

AU - Cahen, David

AU - Hariskos, D.

AU - Klenk, R.

AU - Schock, H. W.

PY - 1995

Y1 - 1995

N2 - Contact potential difference measurements in the dark and under illumination are used to derive the conduction band offset (ΔE c) in a solar cell quality junction formed by chemical bath deposition of CdS on a polycrystalline thin film of Cu(In,Ga)Se2. Our experimental measurements and the estimates made for dipole contributions show that the junction is of type II, i.e., without a spike in the conduction band (ΔEc=80 meV±100 meV). This is consistent with the high performance of the actual solar cell. However, it differs from most previous results on junctions based on single crystals and/or vacuum deposited CdS, which indicated the existence of a conduction band spike.

AB - Contact potential difference measurements in the dark and under illumination are used to derive the conduction band offset (ΔE c) in a solar cell quality junction formed by chemical bath deposition of CdS on a polycrystalline thin film of Cu(In,Ga)Se2. Our experimental measurements and the estimates made for dipole contributions show that the junction is of type II, i.e., without a spike in the conduction band (ΔEc=80 meV±100 meV). This is consistent with the high performance of the actual solar cell. However, it differs from most previous results on junctions based on single crystals and/or vacuum deposited CdS, which indicated the existence of a conduction band spike.

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DO - 10.1063/1.114508

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AN - SCOPUS:0029635472

SN - 0003-6951

VL - 67

SP - 1405

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

Band diagram of the polycrystalline CdS/Cu(In,Ga)Se₂ heterojunction

Abstract

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