Band diagram of the polycrystalline CdS/Cu(In,Ga)Se2 heterojunction

L. Kronik, L. Burstein, M. Leibovitch, Yoram Shapira, D. Gal, E. Moons, J. Beier, G. Hodes, David Cahen, D. Hariskos, R. Klenk, H. W. Schock

Research output: Contribution to journalArticlepeer-review

57 Scopus citations

Abstract

Contact potential difference measurements in the dark and under illumination are used to derive the conduction band offset (ΔE c) in a solar cell quality junction formed by chemical bath deposition of CdS on a polycrystalline thin film of Cu(In,Ga)Se2. Our experimental measurements and the estimates made for dipole contributions show that the junction is of type II, i.e., without a spike in the conduction band (ΔEc=80 meV±100 meV). This is consistent with the high performance of the actual solar cell. However, it differs from most previous results on junctions based on single crystals and/or vacuum deposited CdS, which indicated the existence of a conduction band spike.

Original languageEnglish
Pages (from-to)1405
Number of pages1
JournalApplied Physics Letters
Volume67
DOIs
StatePublished - 1995
Externally publishedYes

Fingerprint

Dive into the research topics of 'Band diagram of the polycrystalline CdS/Cu(In,Ga)Se2 heterojunction'. Together they form a unique fingerprint.

Cite this