Atomically thin gallium layers from solid-melt exfoliation

Vidya Kochat, Atanu Samanta, Yuan Zhang, Sanjit Bhowmick, Praveena Manimunda, Syed Asif S. Asif, Anthony S. Stender, Robert Vajtai, Abhishek K. Singh, Chandra S. Tiwary, Pulickel M. Ajayan

Research output: Contribution to journalArticlepeer-review

153 Scopus citations

Abstract

Among the large number of promising two-dimensional (2D) atomic layer crystals, true metallic layers are rare. Using combined theoretical and experimental approaches, we report on the stability and successful exfoliation of atomically thin "gallenene" sheets on a silicon substrate, which has two distinct atomic arrangements along crystallographic twin directions of the parent a-gallium. With a weak interface between solid and molten phases of gallium, a solid-melt interface exfoliation technique is developed to extract these layers. Phonon dispersion calculations showthat gallenene can be stabilized with bulk gallium lattice parameters. The electronic band structure of gallenene shows a combination of partially filled Dirac cone and the nonlinear dispersive band near the Fermi level, suggesting that gallenene should behave as a metallic layer. Furthermore, it is observed that the strong interaction of gallenene with other 2D semiconductors induces semiconducting to metallic phase transitions in the latter, paving the way for using gallenene as promising metallic contacts in 2D devices.

Original languageEnglish
Article numbere1701373
JournalScience advances
Volume4
Issue number3
DOIs
StatePublished - 9 Mar 2018
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2018 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).

Fingerprint

Dive into the research topics of 'Atomically thin gallium layers from solid-melt exfoliation'. Together they form a unique fingerprint.

Cite this