Atomically engineered interfaces yield extraordinary electrostriction

Haiwu Zhang; Nini Pryds; Dae Sung Park; Nicolas Gauquelin; Simone Santucci; Dennis V. Christensen; Daen Jannis; Dmitry Chezganov; Diana A. Rata; Andrea R. Insinga; Ivano E. Castelli; Johan Verbeeck; Igor Lubomirsky; Paul Muralt; Dragan Damjanovic; Vincenzo Esposito

doi:10.1038/s41586-022-05073-6

Atomically engineered interfaces yield extraordinary electrostriction

Haiwu Zhang
, Nini Pryds
, Dae Sung Park
, Nicolas Gauquelin
, Simone Santucci
, Dennis V. Christensen
, Daen Jannis
, Dmitry Chezganov
, Diana A. Rata
, Andrea R. Insinga
, Ivano E. Castelli
, Johan Verbeeck
, Igor Lubomirsky
, Paul Muralt
, Dragan Damjanovic
, Vincenzo Esposito

Technical University of Denmark
Swiss Federal Institute of Technology Lausanne
University of Antwerp
Martin Luther University Halle-Wittenberg
Weizmann Institute of Science

Research output: Contribution to journal › Article › peer-review

49 Scopus citations

Abstract

Electrostriction is a property of dielectric materials whereby an applied electric field induces a mechanical deformation proportional to the square of that field. The magnitude of the effect is usually minuscule (<10^–19 m² V^–2 for simple oxides). However, symmetry-breaking phenomena at the interfaces can offer an efficient strategy for the design of new properties^1,2. Here we report an engineered electrostrictive effect via the epitaxial deposition of alternating layers of Gd₂O₃-doped CeO₂ and Er₂O₃-stabilized δ-Bi₂O₃ with atomically controlled interfaces on NdGaO₃ substrates. The value of the electrostriction coefficient achieved is 2.38 × 10^–14 m² V^–2, exceeding the best known relaxor ferroelectrics by three orders of magnitude. Our theoretical calculations indicate that this greatly enhanced electrostriction arises from coherent strain imparted by interfacial lattice discontinuity. These artificial heterostructures open a new avenue for the design and manipulation of electrostrictive materials and devices for nano/micro actuation and cutting-edge sensors.

Original language	English
Pages (from-to)	695-700
Number of pages	6
Journal	Nature
Volume	609
Issue number	7928
DOIs	https://doi.org/10.1038/s41586-022-05073-6
State	Published - 22 Sep 2022
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2022, The Author(s), under exclusive licence to Springer Nature Limited.

Funding

This research was supported by the BioWings project, funded by the European Union’s Horizon 2020, Future and Emerging Technologies programme (grant no. 801267), and by the Danish Council for Independent Research Technology and Production Sciences for the DFF—Research Project 2 (grant no. 48293). N.P. and D.V.C. acknowledge funding from Villum Fonden for the NEED project (no. 00027993) and from the Danish Council for Independent Research Technology and Production Sciences for the DFF—Research Project 3 (grant no. 00069 B). V.E. acknowledges funding from Villum Fonden for the IRIDE project (no. 00022862). N.G. and J.V. acknowledge funding from the GOA project ('Solarpaint') of the University of Antwerp. The microscope used in this work was partly funded by the Hercules Fund from the Flemish Government. D.J. acknowledges funding from the FWO Project (no. G093417N) from the Flemish Fund for Scientific Research. D.C. acknowledges TOP/BOF funding from the University of Antwerp. This project has received funding from the European Union’s Horizon 2020 Research Infrastructure—Integrating Activities for Advanced Communities—under grant agreement no. 823717-ESTEEM3. We thank T. D. Pomar and A. J. Bergne for English proofreading.

Funders	Funder number
Danish Council for Independent Research Technology and Production Sciences
European Union’s Horizon 2020, Future and Emerging Technologies programme	801267
Flemish Fund for Scientific Research
Villum Fonden	00022862, 00027993, 00069 B
Horizon 2020 Framework Programme	823717-ESTEEM3
Fonds Wetenschappelijk Onderzoek	G093417N
Universiteit Antwerpen
Vlaamse regering
Danmarks Frie Forskningsfond	48293

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10.1038/s41586-022-05073-6

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Zhang, H., Pryds, N., Park, D. S., Gauquelin, N., Santucci, S., Christensen, D. V., Jannis, D., Chezganov, D., Rata, D. A., Insinga, A. R., Castelli, I. E., Verbeeck, J., Lubomirsky, I., Muralt, P., Damjanovic, D., & Esposito, V. (2022). Atomically engineered interfaces yield extraordinary electrostriction. Nature, 609(7928), 695-700. https://doi.org/10.1038/s41586-022-05073-6

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abstract = "Electrostriction is a property of dielectric materials whereby an applied electric field induces a mechanical deformation proportional to the square of that field. The magnitude of the effect is usually minuscule (<10–19 m2 V–2 for simple oxides). However, symmetry-breaking phenomena at the interfaces can offer an efficient strategy for the design of new properties1,2. Here we report an engineered electrostrictive effect via the epitaxial deposition of alternating layers of Gd2O3-doped CeO2 and Er2O3-stabilized δ-Bi2O3 with atomically controlled interfaces on NdGaO3 substrates. The value of the electrostriction coefficient achieved is 2.38 × 10–14 m2 V–2, exceeding the best known relaxor ferroelectrics by three orders of magnitude. Our theoretical calculations indicate that this greatly enhanced electrostriction arises from coherent strain imparted by interfacial lattice discontinuity. These artificial heterostructures open a new avenue for the design and manipulation of electrostrictive materials and devices for nano/micro actuation and cutting-edge sensors.",

author = "Haiwu Zhang and Nini Pryds and Park, \{Dae Sung\} and Nicolas Gauquelin and Simone Santucci and Christensen, \{Dennis V.\} and Daen Jannis and Dmitry Chezganov and Rata, \{Diana A.\} and Insinga, \{Andrea R.\} and Castelli, \{Ivano E.\} and Johan Verbeeck and Igor Lubomirsky and Paul Muralt and Dragan Damjanovic and Vincenzo Esposito",

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AU - Zhang, Haiwu

AU - Pryds, Nini

AU - Park, Dae Sung

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AU - Santucci, Simone

AU - Christensen, Dennis V.

AU - Jannis, Daen

AU - Chezganov, Dmitry

AU - Rata, Diana A.

AU - Insinga, Andrea R.

AU - Castelli, Ivano E.

AU - Verbeeck, Johan

AU - Lubomirsky, Igor

AU - Muralt, Paul

AU - Damjanovic, Dragan

AU - Esposito, Vincenzo

PY - 2022/9/22

Y1 - 2022/9/22

N2 - Electrostriction is a property of dielectric materials whereby an applied electric field induces a mechanical deformation proportional to the square of that field. The magnitude of the effect is usually minuscule (<10–19 m2 V–2 for simple oxides). However, symmetry-breaking phenomena at the interfaces can offer an efficient strategy for the design of new properties1,2. Here we report an engineered electrostrictive effect via the epitaxial deposition of alternating layers of Gd2O3-doped CeO2 and Er2O3-stabilized δ-Bi2O3 with atomically controlled interfaces on NdGaO3 substrates. The value of the electrostriction coefficient achieved is 2.38 × 10–14 m2 V–2, exceeding the best known relaxor ferroelectrics by three orders of magnitude. Our theoretical calculations indicate that this greatly enhanced electrostriction arises from coherent strain imparted by interfacial lattice discontinuity. These artificial heterostructures open a new avenue for the design and manipulation of electrostrictive materials and devices for nano/micro actuation and cutting-edge sensors.

AB - Electrostriction is a property of dielectric materials whereby an applied electric field induces a mechanical deformation proportional to the square of that field. The magnitude of the effect is usually minuscule (<10–19 m2 V–2 for simple oxides). However, symmetry-breaking phenomena at the interfaces can offer an efficient strategy for the design of new properties1,2. Here we report an engineered electrostrictive effect via the epitaxial deposition of alternating layers of Gd2O3-doped CeO2 and Er2O3-stabilized δ-Bi2O3 with atomically controlled interfaces on NdGaO3 substrates. The value of the electrostriction coefficient achieved is 2.38 × 10–14 m2 V–2, exceeding the best known relaxor ferroelectrics by three orders of magnitude. Our theoretical calculations indicate that this greatly enhanced electrostriction arises from coherent strain imparted by interfacial lattice discontinuity. These artificial heterostructures open a new avenue for the design and manipulation of electrostrictive materials and devices for nano/micro actuation and cutting-edge sensors.

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Atomically engineered interfaces yield extraordinary electrostriction

Abstract

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