TY - JOUR
T1 - Application, modeling and limitations of Y-Function based methods for massive series resistance in nanoscale SOI MOSFETs
AU - Karsenty, A.
AU - Chelly, A.
PY - 2014
Y1 - 2014
N2 - We compare two extraction methods based on the Y-function technique to extract the massive (>100 kΩ) series resistance observed in SOI-MOSFET devices. A part the application of these methods for such high series resistance, the novelty in this paper is that our methods are based on the IDS - VGS characteristics measured for several drain voltages in the linear domain, while the classic methods are based on characteristics measured for several channel length. Here, we compare two types of SOI-MOSFET devices: Ultra-Thin Body (UTB) and Nano-Scale Body (NSB) sharing same W/L ratio but having a channel thickness of 46 nm and 1.6 nm, respectively. These devices were fabricated simultaneously on the same silicon wafer using a selective "gate recessed" process. Their respective current-voltage characteristics measured at room temperature were found to be different by several orders of magnitude. In this paper, we show that, by using two kinds of Y-function based methods, the IDS - VGS characteristics of NSB can be analytically modeled by a massive series resistance depending on the gate voltage.
AB - We compare two extraction methods based on the Y-function technique to extract the massive (>100 kΩ) series resistance observed in SOI-MOSFET devices. A part the application of these methods for such high series resistance, the novelty in this paper is that our methods are based on the IDS - VGS characteristics measured for several drain voltages in the linear domain, while the classic methods are based on characteristics measured for several channel length. Here, we compare two types of SOI-MOSFET devices: Ultra-Thin Body (UTB) and Nano-Scale Body (NSB) sharing same W/L ratio but having a channel thickness of 46 nm and 1.6 nm, respectively. These devices were fabricated simultaneously on the same silicon wafer using a selective "gate recessed" process. Their respective current-voltage characteristics measured at room temperature were found to be different by several orders of magnitude. In this paper, we show that, by using two kinds of Y-function based methods, the IDS - VGS characteristics of NSB can be analytically modeled by a massive series resistance depending on the gate voltage.
KW - Analytical model
KW - I-V characteristics
KW - Nano-Scaled Body devices
KW - SOI MOSFET
KW - Series resistance
KW - Ultra-Thin Body devices
UR - http://www.scopus.com/inward/record.url?scp=84888178562&partnerID=8YFLogxK
U2 - 10.1016/j.sse.2013.10.020
DO - 10.1016/j.sse.2013.10.020
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AN - SCOPUS:84888178562
SN - 0038-1101
VL - 92
SP - 12
EP - 19
JO - Solid-State Electronics
JF - Solid-State Electronics
ER -