Antimonide based materials for infrared detection

Philip Klipstein, Eli Jacobsohn, Olga Klin, Michael Yassen, Zipora Calahorra, Eliezer Weiss, Salomon Risemberg, David Rosenfeld

Research output: Contribution to journalConference articlepeer-review

10 Scopus citations


We propose that the antimonide family of semiconductors should be considered in some cases as a serious alternative to Mercury Cadmium Telluride (MCT) for the active region of next generation IR detectors, based on epitaxial materials. Among the alloys, epitaxial InAs1-ySby on GaSb with 0.07 <y < 0.11 and In1-zAlzSb on InSb with 0 < z < 0.03 together span important regions of the MWIR atmospheric window, yet exhibit strains of less than 0.15%. Both InSb and GaSb are binary substrates available in high quality. The sensitivity of bandgap to composition in In1-zAlzSb is similar to that in MCT. However, in InAs1-ySby this sensitivity is more than halved. In growth from the gas phase, the constraints on temperature stability are about 3-5 times lower than in MCT. Together, these characteristics make it easier to achieve high uniformity, particularly in InAs1-ySby. Finally, high quality superlattices based on InAs/Ga1-xInxSb can be grown by lattice matching to GaSb. This epitaxial material is emerging as an attractive alternative to MCT with a high degree of spatial uniformity and with an ability to span cut-off wavelengths from 3-20μ, in a single material system.

Original languageEnglish
Pages (from-to)653-662
Number of pages10
JournalProceedings of SPIE - The International Society for Optical Engineering
Issue number2
StatePublished - 2002
Externally publishedYes
EventInfrared Technology and Applications XXVIII - Seattle, WA, United States
Duration: 7 Jul 200211 Jul 2002


  • Antimonide
  • Infrared Detector
  • Vapour Phase Epitaxy


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