We propose that the antimonide family of semiconductors should be considered in some cases as a serious alternative to Mercury Cadmium Telluride (MCT) for the active region of next generation IR detectors, based on epitaxial materials. Among the alloys, epitaxial InAs1-ySby on GaSb with 0.07 <y < 0.11 and In1-zAlzSb on InSb with 0 < z < 0.03 together span important regions of the MWIR atmospheric window, yet exhibit strains of less than 0.15%. Both InSb and GaSb are binary substrates available in high quality. The sensitivity of bandgap to composition in In1-zAlzSb is similar to that in MCT. However, in InAs1-ySby this sensitivity is more than halved. In growth from the gas phase, the constraints on temperature stability are about 3-5 times lower than in MCT. Together, these characteristics make it easier to achieve high uniformity, particularly in InAs1-ySby. Finally, high quality superlattices based on InAs/Ga1-xInxSb can be grown by lattice matching to GaSb. This epitaxial material is emerging as an attractive alternative to MCT with a high degree of spatial uniformity and with an ability to span cut-off wavelengths from 3-20μ, in a single material system.
|Number of pages||10|
|Journal||Proceedings of SPIE - The International Society for Optical Engineering|
|State||Published - 2002|
|Event||Infrared Technology and Applications XXVIII - Seattle, WA, United States|
Duration: 7 Jul 2002 → 11 Jul 2002
- Infrared Detector
- Vapour Phase Epitaxy