TY - UNPB
T1 - Anomalous Transport in High-Mobility Superconducting SrTiO3 Thin Films
AU - Yue, Jin
AU - Ayino, Yilikal
AU - Truttmann, Tristan K
AU - Gastiasoro, Maria N
AU - Persky, Eylon
AU - Khanukov, Alex
AU - Lee, Dooyong
AU - Thoutam, Laxman R
AU - Kalisky, Beena
AU - Fernandes, Rafael M
PY - 2021/7/22
Y1 - 2021/7/22
N2 - The study of subtle effects on transport in semiconductors requires high-quality epitaxial structures with low defect density. Using hybrid molecular beam epitaxy (MBE), SrTiO3 films with low-temperature mobility exceeding 42,000 cm2V−1s−1 at low carrier density of 3 x 1017 cm−3 were achieved. A sudden and sharp decrease in residual resistivity accompanied by an enhancement in the superconducting transition temperature were observed across the second Lifshitz transition (LT) where the third band becomes occupied, revealing dominant intra-band scattering. These films further revealed an anomalous behavior in the Hall carrier density as a consequence of the antiferrodistortive (AFD) transition and the temperature-dependence of the Hall scattering factor. Using hybrid MBE growth, phenomenological modeling, temperature-dependent transport measurements, and scanning superconducting quantum interference device imaging, we provide critical insights into the important role of inter- vs intra-band scattering and of AFD domain walls on normal-state and superconducting properties of SrTiO3.
AB - The study of subtle effects on transport in semiconductors requires high-quality epitaxial structures with low defect density. Using hybrid molecular beam epitaxy (MBE), SrTiO3 films with low-temperature mobility exceeding 42,000 cm2V−1s−1 at low carrier density of 3 x 1017 cm−3 were achieved. A sudden and sharp decrease in residual resistivity accompanied by an enhancement in the superconducting transition temperature were observed across the second Lifshitz transition (LT) where the third band becomes occupied, revealing dominant intra-band scattering. These films further revealed an anomalous behavior in the Hall carrier density as a consequence of the antiferrodistortive (AFD) transition and the temperature-dependence of the Hall scattering factor. Using hybrid MBE growth, phenomenological modeling, temperature-dependent transport measurements, and scanning superconducting quantum interference device imaging, we provide critical insights into the important role of inter- vs intra-band scattering and of AFD domain walls on normal-state and superconducting properties of SrTiO3.
M3 - פרסום מוקדם
T3 - arXiv preprint arXiv:2107.10904
BT - Anomalous Transport in High-Mobility Superconducting SrTiO3 Thin Films
ER -