Anistropic growth and high performance organic thin film transistor

Akanksha Sharma, Pramod Kumar, Subhasis Ghosh

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations


The central feature in the operation of organic electronic devices is the charge carrier transport which depends upon the molecular structure and the arrangements of molecules on the substrate. The charge transport properties can be improved by maximizing the order of the thin films. Understanding the relationship between film morphology and charge transport is key to enhance the performance of the thin film transistor. We demonstrate that anisotropic film growth achieved by tailoring different growth parameters is a crucial factor in achieving high performance thin film transistor. Here we present detailed characterization of organic thin films employed for fabrication of high performance organic thin film transistor using atomic force microscopy and X-ray diffraction measurements to provide a direct evidence of the effect of anisotropic growth and crystallinity of the film on improved device performance.

Original languageEnglish
Title of host publicationSolid State Physics - Proceedings of the 56th DAE Solid State Physics Symposium 2011
Number of pages4
StatePublished - 2012
Externally publishedYes
Event56th DAE Solid State Physics Symposium 2011 - Kattankulathur, Tamilnadu, India
Duration: 19 Dec 201123 Dec 2011

Publication series

NameAIP Conference Proceedings
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616


Conference56th DAE Solid State Physics Symposium 2011
CityKattankulathur, Tamilnadu


  • AFM
  • CuPc
  • OTFT
  • Organic Semiconductor
  • morphology


Dive into the research topics of 'Anistropic growth and high performance organic thin film transistor'. Together they form a unique fingerprint.

Cite this