Anisotropic magnetoresistance and planar Hall effect in epitaxial films of La0.7 Ca0.3 MnO3

N. Naftalis; Y. Bason; J. Hoffman; X. Hong; C. H. Ahn; L. Klein

doi:10.1063/1.3176934

Anisotropic magnetoresistance and planar Hall effect in epitaxial films of La_0.7 Ca_0.3 MnO₃

N. Naftalis, Y. Bason, J. Hoffman, X. Hong, C. H. Ahn, L. Klein

Department of Physics

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

We measured the anisotropic magnetoresistance (AMR) and the planar Hall effect (PHE) in a [001] oriented epitaxial thin film of La_0.7 Ca _0.3 MnO₃ (LCMO) as a function of magnetic field, temperature, and current direction relative to the crystal axes. We find that both AMR and PHE in LCMO depend strongly on the current orientation relative to the crystal axes, and we demonstrate the applicability of AMR and PHE equations based on a fourth order magnetoresistance tensor consistent with the film symmetry.

Original language	English
Article number	023916
Journal	Journal of Applied Physics
Volume	106
Issue number	2
DOIs	https://doi.org/10.1063/1.3176934
State	Published - 2009

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abstract = "We measured the anisotropic magnetoresistance (AMR) and the planar Hall effect (PHE) in a [001] oriented epitaxial thin film of La0.7 Ca 0.3 MnO3 (LCMO) as a function of magnetic field, temperature, and current direction relative to the crystal axes. We find that both AMR and PHE in LCMO depend strongly on the current orientation relative to the crystal axes, and we demonstrate the applicability of AMR and PHE equations based on a fourth order magnetoresistance tensor consistent with the film symmetry.",

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AU - Naftalis, N.

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AU - Hong, X.

AU - Ahn, C. H.

AU - Klein, L.

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N2 - We measured the anisotropic magnetoresistance (AMR) and the planar Hall effect (PHE) in a [001] oriented epitaxial thin film of La0.7 Ca 0.3 MnO3 (LCMO) as a function of magnetic field, temperature, and current direction relative to the crystal axes. We find that both AMR and PHE in LCMO depend strongly on the current orientation relative to the crystal axes, and we demonstrate the applicability of AMR and PHE equations based on a fourth order magnetoresistance tensor consistent with the film symmetry.

AB - We measured the anisotropic magnetoresistance (AMR) and the planar Hall effect (PHE) in a [001] oriented epitaxial thin film of La0.7 Ca 0.3 MnO3 (LCMO) as a function of magnetic field, temperature, and current direction relative to the crystal axes. We find that both AMR and PHE in LCMO depend strongly on the current orientation relative to the crystal axes, and we demonstrate the applicability of AMR and PHE equations based on a fourth order magnetoresistance tensor consistent with the film symmetry.

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Anisotropic magnetoresistance and planar Hall effect in epitaxial films of La_0.7 Ca_0.3 MnO₃

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