TY - JOUR
T1 - Angular dependence of the Hall effect of La 0.8Sr 0.2MnO 3 films
AU - Naftalis, Netanel
AU - Haham, Noam
AU - Hoffman, Jason
AU - Marshall, Matthew S.J.
AU - Ahn, C. H.
AU - Klein, Lior
PY - 2012/11/5
Y1 - 2012/11/5
N2 - We find that the Hall effect resistivity (ρ xy) of thin films of La 0.8Sr 0.2MnO 3 varies as a function of the angle θ between the applied magnetic field and the film normal as ρ xy=acosθ+bcos3θ, where |b| increases with increasing temperature and decreases with increasing magnetic field. We find that the angular dependence of the longitudinal resistivity and the magnetization cannot fully explain the surprising term b, suggesting it is a manifestation of an intrinsic transport property.
AB - We find that the Hall effect resistivity (ρ xy) of thin films of La 0.8Sr 0.2MnO 3 varies as a function of the angle θ between the applied magnetic field and the film normal as ρ xy=acosθ+bcos3θ, where |b| increases with increasing temperature and decreases with increasing magnetic field. We find that the angular dependence of the longitudinal resistivity and the magnetization cannot fully explain the surprising term b, suggesting it is a manifestation of an intrinsic transport property.
UR - http://www.scopus.com/inward/record.url?scp=84869039657&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.86.184402
DO - 10.1103/PhysRevB.86.184402
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SN - 1098-0121
VL - 86
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 18
M1 - 184402
ER -