Angular dependence of domain wall resistivity in (formula presented) films

(formula presented) is a (formula presented) itinerant ferromagnet (formula presented) with stripe domain structure. Using high-quality thin films of (formula presented) we study the resistivity induced by its very narrow (∼3 nm) Bloch domain walls (formula presented) (DWR), at temperatures between 2 K and (formula presented) as a function of the angle (formula presented) between the electric current and the ferromagnetic domains walls. We find that (formula presented) which provides the first experimental indication that the angular dependence of spin accumulation contribution to DWR is (formula presented) We expect magnetic multilayers to exhibit a similar behavior.