Anderson Localization in Ferromagnetic Semiconductors Due to Spin Disorder I. Narrow Conduction Band

E. M. Kogan, M. I. Auslender

Research output: Contribution to journalArticlepeer-review

38 Scopus citations

Abstract

Theoretical investigation is made of the temperature induced metal‐insulator transition in doped ferromagnetic semiconductors, described by s‐d exchange model. The transition is a result of the mobility edge movement, the disorder being due to magnetic ions spin density fluctuations. The electrons are described in tight binding approximation. Using ideas and methods of Anderson localization theory simple formulas are obtained, which connect the mobility edge with shortrange order characteristics of the magnetic subsystem‐static spin correlators. The theory developed is applied to the description of the resistivity of CdCr2Se4. The theoretical results are in agreement with experiment in a wide temperature range.

Original languageEnglish
Pages (from-to)613-620
Number of pages8
JournalPhysica Status Solidi (B): Basic Research
Volume147
Issue number2
DOIs
StatePublished - 1 Jun 1988
Externally publishedYes

Fingerprint

Dive into the research topics of 'Anderson Localization in Ferromagnetic Semiconductors Due to Spin Disorder I. Narrow Conduction Band'. Together they form a unique fingerprint.

Cite this