An investigation of the recombination mechanisms associated with the X states in type II GaAs/AlAs superlattices

W. R. Tribe, S. G. Lyapin, P. C. Klipstein, G. W. Smith, R. Grey

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

We present a new examination of the phonon modes participating in the recombination processes from type II GaAs/AlAs superlattices. This is achieved through the use of a novel Raman resonance at the type II band gap, which provides a very precise, in-situ measurement technique for the important phonon energies. These are compared with the energies of the phonon satellites appearing in the photoluminescence emissions, using external uniaxial stress to access, in turn, the optical properties of both the longitudinal and transverse X states. Not only do these measurements resolve an existing controversy in the assignment of one of these satellites, but they also demonstrate that two of the others are currently in error, and re-assignments are proposed.

Original languageEnglish
Pages (from-to)293
Number of pages1
JournalSuperlattices and Microstructures
Volume15
Issue number3
DOIs
StatePublished - Apr 1994
Externally publishedYes

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