An experimental determination of the critical exponents at the metal-insulator transition

This work deals with a determination of the magnitude of the critical exponents and their ratio from an analysis of the temperature dependence of the conductivity and magnetoresistivity of doped Ge 〈 As 〉 with an impurity concentration making it an insulator near the metal-insulator transition. The values found are {extra high symbol}{extra low symbol} = 0.60 ± 0.04, ξ = 1.38 ± 0.07, ξ {extra high symbol}{extra low symbol} = 2.3 ± 0.2; neither the critical exponents nor their ratio depend on compensation within 0 < k < 60%.