An experimental determination of the critical exponents at the metal-insulator transition

A. N. Ionov, I. S. Shlimak, M. N. Matveev

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

This work deals with a determination of the magnitude of the critical exponents and their ratio from an analysis of the temperature dependence of the conductivity and magnetoresistivity of doped Ge 〈 As 〉 with an impurity concentration making it an insulator near the metal-insulator transition. The values found are {extra high symbol}{extra low symbol} = 0.60 ± 0.04, ξ = 1.38 ± 0.07, ξ {extra high symbol}{extra low symbol} = 2.3 ± 0.2; neither the critical exponents nor their ratio depend on compensation within 0 < k < 60%.

Original languageEnglish
Pages (from-to)763-766
Number of pages4
JournalSolid State Communications
Volume47
Issue number10
DOIs
StatePublished - Sep 1983
Externally publishedYes

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