Abstract
This work deals with a determination of the magnitude of the critical exponents and their ratio from an analysis of the temperature dependence of the conductivity and magnetoresistivity of doped Ge 〈 As 〉 with an impurity concentration making it an insulator near the metal-insulator transition. The values found are {extra high symbol}{extra low symbol} = 0.60 ± 0.04, ξ = 1.38 ± 0.07, ξ {extra high symbol}{extra low symbol} = 2.3 ± 0.2; neither the critical exponents nor their ratio depend on compensation within 0 < k < 60%.
Original language | English |
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Pages (from-to) | 763-766 |
Number of pages | 4 |
Journal | Solid State Communications |
Volume | 47 |
Issue number | 10 |
DOIs | |
State | Published - Sep 1983 |
Externally published | Yes |