An evaluation of Ti-based metal gate electrodes on Hf-silicate dielectrics for dual-metal-gate applications

S. Y. Son; P. Kumar; J. S. Lee; H. Cho; H. S. Jung; K. J. Min; C. J. Kang; R. K. Singh

doi:10.1149/1.2837653

An evaluation of Ti-based metal gate electrodes on Hf-silicate dielectrics for dual-metal-gate applications

S. Y. Son
, P. Kumar
, J. S. Lee
, H. Cho
, H. S. Jung
, K. J. Min
, C. J. Kang
, R. K. Singh

University of Florida
Samsung
The Electrochemical Society

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

An evaluation of Ti-based gate metals (Ti, TiN, and TiB2) on Hf-silicate gate dielectric prepared by atomic layer deposition has been reported. The effective metal work functions, calculated by taking an interface layer and interface charge into consideration, were 4.27, 4.56, and 5.08 eV for Ti, TiN, and TiB2, respectively. Regardless of gate electrodes, the conduction mechanism of the samples was fitted with the Poole-Frenkel model, which is related to oxygen vacancies in the film. A Ti gate electrode was found to be more favorable for n-channel metal oxide semiconductor (MOS) devices, and TiB2 gate electrode can be used for p-channel MOS devices with Hf-silicate dielectrics.

Original language	English
Pages (from-to)	H81-H83
Journal	Electrochemical and Solid-State Letters
Volume	11
Issue number	4
DOIs	https://doi.org/10.1149/1.2837653
State	Published - 2008
Externally published	Yes

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title = "An evaluation of Ti-based metal gate electrodes on Hf-silicate dielectrics for dual-metal-gate applications",

abstract = "An evaluation of Ti-based gate metals (Ti, TiN, and TiB2) on Hf-silicate gate dielectric prepared by atomic layer deposition has been reported. The effective metal work functions, calculated by taking an interface layer and interface charge into consideration, were 4.27, 4.56, and 5.08 eV for Ti, TiN, and TiB2, respectively. Regardless of gate electrodes, the conduction mechanism of the samples was fitted with the Poole-Frenkel model, which is related to oxygen vacancies in the film. A Ti gate electrode was found to be more favorable for n-channel metal oxide semiconductor (MOS) devices, and TiB2 gate electrode can be used for p-channel MOS devices with Hf-silicate dielectrics.",

author = "Son, \{S. Y.\} and P. Kumar and Lee, \{J. S.\} and H. Cho and Jung, \{H. S.\} and Min, \{K. J.\} and Kang, \{C. J.\} and Singh, \{R. K.\}",

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T1 - An evaluation of Ti-based metal gate electrodes on Hf-silicate dielectrics for dual-metal-gate applications

AU - Son, S. Y.

AU - Kumar, P.

AU - Lee, J. S.

AU - Cho, H.

AU - Jung, H. S.

AU - Min, K. J.

AU - Kang, C. J.

AU - Singh, R. K.

PY - 2008

Y1 - 2008

N2 - An evaluation of Ti-based gate metals (Ti, TiN, and TiB2) on Hf-silicate gate dielectric prepared by atomic layer deposition has been reported. The effective metal work functions, calculated by taking an interface layer and interface charge into consideration, were 4.27, 4.56, and 5.08 eV for Ti, TiN, and TiB2, respectively. Regardless of gate electrodes, the conduction mechanism of the samples was fitted with the Poole-Frenkel model, which is related to oxygen vacancies in the film. A Ti gate electrode was found to be more favorable for n-channel metal oxide semiconductor (MOS) devices, and TiB2 gate electrode can be used for p-channel MOS devices with Hf-silicate dielectrics.

AB - An evaluation of Ti-based gate metals (Ti, TiN, and TiB2) on Hf-silicate gate dielectric prepared by atomic layer deposition has been reported. The effective metal work functions, calculated by taking an interface layer and interface charge into consideration, were 4.27, 4.56, and 5.08 eV for Ti, TiN, and TiB2, respectively. Regardless of gate electrodes, the conduction mechanism of the samples was fitted with the Poole-Frenkel model, which is related to oxygen vacancies in the film. A Ti gate electrode was found to be more favorable for n-channel metal oxide semiconductor (MOS) devices, and TiB2 gate electrode can be used for p-channel MOS devices with Hf-silicate dielectrics.

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JO - Electrochemical and Solid-State Letters

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IS - 4

ER -

An evaluation of Ti-based metal gate electrodes on Hf-silicate dielectrics for dual-metal-gate applications

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