An evaluation of Ti-based metal gate electrodes on Hf-silicate dielectrics for dual-metal-gate applications

S. Y. Son, P. Kumar, J. S. Lee, H. Cho, H. S. Jung, K. J. Min, C. J. Kang, R. K. Singh

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

An evaluation of Ti-based gate metals (Ti, TiN, and TiB2) on Hf-silicate gate dielectric prepared by atomic layer deposition has been reported. The effective metal work functions, calculated by taking an interface layer and interface charge into consideration, were 4.27, 4.56, and 5.08 eV for Ti, TiN, and TiB2, respectively. Regardless of gate electrodes, the conduction mechanism of the samples was fitted with the Poole-Frenkel model, which is related to oxygen vacancies in the film. A Ti gate electrode was found to be more favorable for n-channel metal oxide semiconductor (MOS) devices, and TiB2 gate electrode can be used for p-channel MOS devices with Hf-silicate dielectrics.

Original languageEnglish
Pages (from-to)H81-H83
JournalElectrochemical and Solid-State Letters
Volume11
Issue number4
DOIs
StatePublished - 2008
Externally publishedYes

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