TY - JOUR
T1 - An evaluation of Ti-based metal gate electrodes on Hf-silicate dielectrics for dual-metal-gate applications
AU - Son, S. Y.
AU - Kumar, P.
AU - Lee, J. S.
AU - Cho, H.
AU - Jung, H. S.
AU - Min, K. J.
AU - Kang, C. J.
AU - Singh, R. K.
PY - 2008
Y1 - 2008
N2 - An evaluation of Ti-based gate metals (Ti, TiN, and TiB2) on Hf-silicate gate dielectric prepared by atomic layer deposition has been reported. The effective metal work functions, calculated by taking an interface layer and interface charge into consideration, were 4.27, 4.56, and 5.08 eV for Ti, TiN, and TiB2, respectively. Regardless of gate electrodes, the conduction mechanism of the samples was fitted with the Poole-Frenkel model, which is related to oxygen vacancies in the film. A Ti gate electrode was found to be more favorable for n-channel metal oxide semiconductor (MOS) devices, and TiB2 gate electrode can be used for p-channel MOS devices with Hf-silicate dielectrics.
AB - An evaluation of Ti-based gate metals (Ti, TiN, and TiB2) on Hf-silicate gate dielectric prepared by atomic layer deposition has been reported. The effective metal work functions, calculated by taking an interface layer and interface charge into consideration, were 4.27, 4.56, and 5.08 eV for Ti, TiN, and TiB2, respectively. Regardless of gate electrodes, the conduction mechanism of the samples was fitted with the Poole-Frenkel model, which is related to oxygen vacancies in the film. A Ti gate electrode was found to be more favorable for n-channel metal oxide semiconductor (MOS) devices, and TiB2 gate electrode can be used for p-channel MOS devices with Hf-silicate dielectrics.
UR - http://www.scopus.com/inward/record.url?scp=39349093810&partnerID=8YFLogxK
U2 - 10.1149/1.2837653
DO - 10.1149/1.2837653
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AN - SCOPUS:39349093810
SN - 1099-0062
VL - 11
SP - H81-H83
JO - Electrochemical and Solid-State Letters
JF - Electrochemical and Solid-State Letters
IS - 4
ER -