An evaluation of thermal stability of Ti B2 metal gate on Hf silicate for p -channel metal oxide semiconductor application

S. Y. Son; P. Kumar; H. Cho; K. J. Min; C. J. Kang; R. K. Singh

doi:10.1063/1.2913766

An evaluation of thermal stability of Ti B2 metal gate on Hf silicate for p -channel metal oxide semiconductor application

S. Y. Son, P. Kumar, H. Cho, K. J. Min, C. J. Kang, R. K. Singh

Research output: Contribution to journal › Article › peer-review

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Abstract

An evaluation of Ti B2 gate metal on Hf-silicate dielectric prepared by atomic layer deposition method has been reported. The extracted effective metal work function for Ti B2 gate was about 5.08 eV. The work function showed almost identical values and the sharp interface between metal and dielectric was confirmed after postdeposition annealing at 1000 °C. The work function lowering (4.91 eV) at 1100 °C was caused by metal-dielectric intermixing and oxygen vacancy formation. Ti B2 gate electrode was found to be suitable for use in p -channel metal oxide semiconductor device.

Original language	English
Article number	172106
Journal	Applied Physics Letters
Volume	92
Issue number	17
DOIs	https://doi.org/10.1063/1.2913766
State	Published - 2008
Externally published	Yes

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title = "An evaluation of thermal stability of Ti B2 metal gate on Hf silicate for p -channel metal oxide semiconductor application",

abstract = "An evaluation of Ti B2 gate metal on Hf-silicate dielectric prepared by atomic layer deposition method has been reported. The extracted effective metal work function for Ti B2 gate was about 5.08 eV. The work function showed almost identical values and the sharp interface between metal and dielectric was confirmed after postdeposition annealing at 1000 °C. The work function lowering (4.91 eV) at 1100 °C was caused by metal-dielectric intermixing and oxygen vacancy formation. Ti B2 gate electrode was found to be suitable for use in p -channel metal oxide semiconductor device.",

author = "Son, {S. Y.} and P. Kumar and H. Cho and Min, {K. J.} and Kang, {C. J.} and Singh, {R. K.}",

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AU - Son, S. Y.

AU - Kumar, P.

AU - Cho, H.

AU - Min, K. J.

AU - Kang, C. J.

AU - Singh, R. K.

PY - 2008

Y1 - 2008

N2 - An evaluation of Ti B2 gate metal on Hf-silicate dielectric prepared by atomic layer deposition method has been reported. The extracted effective metal work function for Ti B2 gate was about 5.08 eV. The work function showed almost identical values and the sharp interface between metal and dielectric was confirmed after postdeposition annealing at 1000 °C. The work function lowering (4.91 eV) at 1100 °C was caused by metal-dielectric intermixing and oxygen vacancy formation. Ti B2 gate electrode was found to be suitable for use in p -channel metal oxide semiconductor device.

AB - An evaluation of Ti B2 gate metal on Hf-silicate dielectric prepared by atomic layer deposition method has been reported. The extracted effective metal work function for Ti B2 gate was about 5.08 eV. The work function showed almost identical values and the sharp interface between metal and dielectric was confirmed after postdeposition annealing at 1000 °C. The work function lowering (4.91 eV) at 1100 °C was caused by metal-dielectric intermixing and oxygen vacancy formation. Ti B2 gate electrode was found to be suitable for use in p -channel metal oxide semiconductor device.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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An evaluation of thermal stability of Ti B2 metal gate on Hf silicate for p -channel metal oxide semiconductor application

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