Abstract
Distributed charge injection (CI) scheme featuring distributed VMAX-complaint CI clamps,distributed digital droop detectors (DDDs),and distributed droop controllers for fast mitigation of voltage droop is fabricated in 10-nm FinFET CMOS test-chip. A local DDD detects nearby voltage droop in two clock cycles of IP block,and quickly triggers associated CI clamps to inject charge from a high voltage rail (e.g.,1.8 V) to VCC for immediate voltage droop mitigation. Local droop controller collectively guarantees stable operation after CI is triggered,by gradually allowing the voltage regulator to take over after the droop subsides. Measured data shows droop reduction by up to 45% for a uniform transient load current transition,and by 38% in a hot-spot load current transition at 1.0 V and 2.0 GHz. The droop reduction is translated to power savings of ∼11% over a guard-banded baseline.
Original language | English |
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Title of host publication | ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 143-146 |
Number of pages | 4 |
ISBN (Electronic) | 9781728115504 |
DOIs | |
State | Published - Sep 2019 |
Externally published | Yes |
Event | 45th IEEE European Solid State Circuits Conference, ESSCIRC 2019 - Cracow, Poland Duration: 23 Sep 2019 → 26 Sep 2019 |
Publication series
Name | ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference |
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Conference
Conference | 45th IEEE European Solid State Circuits Conference, ESSCIRC 2019 |
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Country/Territory | Poland |
City | Cracow |
Period | 23/09/19 → 26/09/19 |
Bibliographical note
Publisher Copyright:© 2019 IEEE.
Keywords
- Distributed charge injection (CI)
- fast voltage droop mitigation
- hot-spot load current transition
- local digital droop detector (DDD)