Abstract
Distributed charge injection (CI) scheme featuring distributed V MAX-complaint CI clamps, distributed digital droop detectors (DDDs), and distributed droop controllers for fast mitigation of voltage droop is fabricated in 10-nm FinFET CMOS test-chip. A local DDD detects nearby voltage droop in two clock cycles of IP block, and quickly triggers associated CI clamps to inject charge from a high voltage rail (e.g., 1.8 V) to V CC for immediate voltage droop mitigation. Local droop controller collectively guarantees stable operation after CI is triggered, by gradually allowing the voltage regulator to take over after the droop subsides. Measured data shows droop reduction by up to 45% for a uniform transient load current transition, and by 38% in a hot-spot load current transition at 1.0 V and 2.0 GHz. The droop reduction is translated to power savings of 11% over a guard-banded baseline.
| Original language | English |
|---|---|
| Article number | 8877926 |
| Pages (from-to) | 143-146 |
| Number of pages | 4 |
| Journal | IEEE Solid-State Circuits Letters |
| Volume | 2 |
| Issue number | 9 |
| DOIs | |
| State | Published - Sep 2019 |
| Externally published | Yes |
Bibliographical note
Publisher Copyright:© 2018 IEEE.
Funding
We would like to thank the InfoComm. Development Center (IDEC UPM), which have provided us with the grid infrastructure for us to do the research. We also would like to take this opportunity to thank the National University of Malaysia Medical Centre (HUKM) and Hospital UiTM Sungai Buloh for providing us the sample of medical data to use in our research area.
| Funders | Funder number |
|---|---|
| HUKM | |
| Hospital UiTM Sungai Buloh | |
| National University of Malaysia Medical Centre |
Keywords
- Distributed charge injection (CI)
- Fast voltage droop mitigation
- Hot-spot load current transition
- Local digital droop detector (DDD)