AM4: MRAM Crossbar Based CAM/TCAM/ACAM/AP for In-Memory Computing

Esteban Garzon, Marco Lanuzza, Adam Teman, Leonid Yavits

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

In-memory computing seeks to minimize data movement and alleviate the memory wall by computing in-situ, in the same place that the data is located. One of the key emerging technologies that promises to enable such computing-in-memory is spin-transfer torque magnetic tunnel junction (STT-MTJ). This paper proposes AM4, a combined STT-MTJ-based Content Addressable Memory (CAM), Ternary CAM (TCAM), approximate matching (similarity search) CAM (ACAM), and in-memory Associative Processor (AP) design, inspired by the recently announced Samsung MRAM crossbar. We demonstrate and evaluate the performance and energy-efficiency of the AM4-based AP using a variety of data intensive workloads. We show that an AM4-based AP outperforms state-of-the-art solutions both in performance (with the average speedup of about 10 ×) and energy-efficiency (by about 60 × on average).

Original languageEnglish
Pages (from-to)408-421
Number of pages14
JournalIEEE Journal on Emerging and Selected Topics in Circuits and Systems
Volume13
Issue number1
DOIs
StatePublished - 1 Mar 2023

Bibliographical note

Publisher Copyright:
© 2011 IEEE.

Keywords

  • CAM
  • MRAM
  • MTJ
  • Non-von Neumann computer architecture
  • TCAM
  • associative memories
  • associative processor
  • double-barrier MTJ
  • emerging memories

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