Ambient induced degradation and chemically activated recovery in copper phthalocyanine thin film transistors

Jeongwon Park; James E. Royer; Corneliu N. Colesniuc; Forest I. Bohrer; Amos Sharoni; Sungho Jin; Ivan K. Schuller; William C. Trogler; Andrew C. Kummel

doi:10.1063/1.3159885

Ambient induced degradation and chemically activated recovery in copper phthalocyanine thin film transistors

Jeongwon Park, James E. Royer, Corneliu N. Colesniuc, Forest I. Bohrer, Amos Sharoni, Sungho Jin, Ivan K. Schuller, William C. Trogler, Andrew C. Kummel

University of California at San Diego

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

The electrical degradation (aging) of copper phthalocyanine (CuPc) organic thin film transistors (OTFTs) was investigated. Thick (1000 ML) and ultrathin (4 ML) channel thicknesses were used in bottom contact OTFTs to correlate the electrical effects of aging with film microstructure. Proper TFT saturation behavior was unattainable in thick devices subject to ambient aging; however ultrathin devices were significantly less susceptible and maintained good saturation and subthreshold behavior. Therefore 1000 monolayer (ML) CuPc OTFTs were characterized in ambient air, clean dry air, clean humidified air, and NO_x environments to isolate the ambient components that induce aging. Thick channel devices which had been aged in ambient air to the point of losing all saturation behavior could be restored to proper saturation behavior by exposure to clean humidified air. The data are consistent with aging resulting primarily from adsorption of strong oxidants from ambient air within the grain boundaries of the CuPc films.

Original language	English
Article number	034505
Journal	Journal of Applied Physics
Volume	106
Issue number	3
DOIs	https://doi.org/10.1063/1.3159885
State	Published - 2009
Externally published	Yes

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title = "Ambient induced degradation and chemically activated recovery in copper phthalocyanine thin film transistors",

abstract = "The electrical degradation (aging) of copper phthalocyanine (CuPc) organic thin film transistors (OTFTs) was investigated. Thick (1000 ML) and ultrathin (4 ML) channel thicknesses were used in bottom contact OTFTs to correlate the electrical effects of aging with film microstructure. Proper TFT saturation behavior was unattainable in thick devices subject to ambient aging; however ultrathin devices were significantly less susceptible and maintained good saturation and subthreshold behavior. Therefore 1000 monolayer (ML) CuPc OTFTs were characterized in ambient air, clean dry air, clean humidified air, and NOx environments to isolate the ambient components that induce aging. Thick channel devices which had been aged in ambient air to the point of losing all saturation behavior could be restored to proper saturation behavior by exposure to clean humidified air. The data are consistent with aging resulting primarily from adsorption of strong oxidants from ambient air within the grain boundaries of the CuPc films.",

author = "Jeongwon Park and Royer, {James E.} and Colesniuc, {Corneliu N.} and Bohrer, {Forest I.} and Amos Sharoni and Sungho Jin and Schuller, {Ivan K.} and Trogler, {William C.} and Kummel, {Andrew C.}",

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doi = "10.1063/1.3159885",

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AU - Park, Jeongwon

AU - Royer, James E.

AU - Colesniuc, Corneliu N.

AU - Bohrer, Forest I.

AU - Sharoni, Amos

AU - Jin, Sungho

AU - Schuller, Ivan K.

AU - Trogler, William C.

AU - Kummel, Andrew C.

PY - 2009

Y1 - 2009

N2 - The electrical degradation (aging) of copper phthalocyanine (CuPc) organic thin film transistors (OTFTs) was investigated. Thick (1000 ML) and ultrathin (4 ML) channel thicknesses were used in bottom contact OTFTs to correlate the electrical effects of aging with film microstructure. Proper TFT saturation behavior was unattainable in thick devices subject to ambient aging; however ultrathin devices were significantly less susceptible and maintained good saturation and subthreshold behavior. Therefore 1000 monolayer (ML) CuPc OTFTs were characterized in ambient air, clean dry air, clean humidified air, and NOx environments to isolate the ambient components that induce aging. Thick channel devices which had been aged in ambient air to the point of losing all saturation behavior could be restored to proper saturation behavior by exposure to clean humidified air. The data are consistent with aging resulting primarily from adsorption of strong oxidants from ambient air within the grain boundaries of the CuPc films.

AB - The electrical degradation (aging) of copper phthalocyanine (CuPc) organic thin film transistors (OTFTs) was investigated. Thick (1000 ML) and ultrathin (4 ML) channel thicknesses were used in bottom contact OTFTs to correlate the electrical effects of aging with film microstructure. Proper TFT saturation behavior was unattainable in thick devices subject to ambient aging; however ultrathin devices were significantly less susceptible and maintained good saturation and subthreshold behavior. Therefore 1000 monolayer (ML) CuPc OTFTs were characterized in ambient air, clean dry air, clean humidified air, and NOx environments to isolate the ambient components that induce aging. Thick channel devices which had been aged in ambient air to the point of losing all saturation behavior could be restored to proper saturation behavior by exposure to clean humidified air. The data are consistent with aging resulting primarily from adsorption of strong oxidants from ambient air within the grain boundaries of the CuPc films.

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Ambient induced degradation and chemically activated recovery in copper phthalocyanine thin film transistors

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