Amalgamated q-ary codes for multi-level flash memories

Yifat Manzor; Osnat Keren

doi:10.1109/dft.2012.6378207

Amalgamated q-ary codes for multi-level flash memories

Yifat Manzor, Osnat Keren

Bar-Ilan University - The Alexander Kofkin Faculty of Engineering

Bar-Ilan University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A flash memory is a non-volatile memory based on electron storing mechanism. A multi-level flash memory cell can store one of q symbols (q > 2). As q increases, the data becomes less reliable and the probability it may be distorted by different types of errors increases. This paper presents an amalgamated q-ary code capable of correcting a mixture of t_s symmetric errors and additional t_a asymmetric errors of limited magnitude l. In the proposed code, each q-ary codeword is composed of n multi-bit symbols, each multi-bit (i.e. q-ary) symbol is viewed as two sub-symbols over two different alphabets. The new construction has higher code rate than the conventional single-alphabet code.

Original language	English
Title of host publication	Proceedings of the 2012 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2012
Pages	98-103
Number of pages	6
DOIs	https://doi.org/10.1109/dft.2012.6378207
State	Published - 2012
Event	2012 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2012 - Austin, TX, United States Duration: 3 Oct 2012 → 5 Oct 2012

Publication series

Name	Proceedings - IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems
ISSN (Print)	1550-5774

Conference

Conference	2012 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2012
Country/Territory	United States
City	Austin, TX
Period	3/10/12 → 5/10/12

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10.1109/dft.2012.6378207

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Manzor, Y., & Keren, O. (2012). Amalgamated q-ary codes for multi-level flash memories. In Proceedings of the 2012 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2012 (pp. 98-103). Article 6378207 (Proceedings - IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems). https://doi.org/10.1109/dft.2012.6378207

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abstract = "A flash memory is a non-volatile memory based on electron storing mechanism. A multi-level flash memory cell can store one of q symbols (q > 2). As q increases, the data becomes less reliable and the probability it may be distorted by different types of errors increases. This paper presents an amalgamated q-ary code capable of correcting a mixture of ts symmetric errors and additional ta asymmetric errors of limited magnitude l. In the proposed code, each q-ary codeword is composed of n multi-bit symbols, each multi-bit (i.e. q-ary) symbol is viewed as two sub-symbols over two different alphabets. The new construction has higher code rate than the conventional single-alphabet code.",

author = "Yifat Manzor and Osnat Keren",

year = "2012",

doi = "10.1109/dft.2012.6378207",

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isbn = "9781467330428",

series = "Proceedings - IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems",

pages = "98--103",

booktitle = "Proceedings of the 2012 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2012",

note = "2012 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2012 ; Conference date: 03-10-2012 Through 05-10-2012",

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Manzor, Y & Keren, O 2012, Amalgamated q-ary codes for multi-level flash memories. in Proceedings of the 2012 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2012., 6378207, Proceedings - IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems, pp. 98-103, 2012 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2012, Austin, TX, United States, 3/10/12. https://doi.org/10.1109/dft.2012.6378207

Amalgamated q-ary codes for multi-level flash memories. / Manzor, Yifat; Keren, Osnat.
Proceedings of the 2012 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2012. 2012. p. 98-103 6378207 (Proceedings - IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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Amalgamated q-ary codes for multi-level flash memories

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