Amalgamated q-ary codes for multi-level flash memories

Yifat Manzor, Osnat Keren

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

A flash memory is a non-volatile memory based on electron storing mechanism. A multi-level flash memory cell can store one of q symbols (q > 2). As q increases, the data becomes less reliable and the probability it may be distorted by different types of errors increases. This paper presents an amalgamated q-ary code capable of correcting a mixture of ts symmetric errors and additional ta asymmetric errors of limited magnitude l. In the proposed code, each q-ary codeword is composed of n multi-bit symbols, each multi-bit (i.e. q-ary) symbol is viewed as two sub-symbols over two different alphabets. The new construction has higher code rate than the conventional single-alphabet code.

Original languageEnglish
Title of host publicationProceedings of the 2012 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2012
Pages98-103
Number of pages6
DOIs
StatePublished - 2012
Event2012 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2012 - Austin, TX, United States
Duration: 3 Oct 20125 Oct 2012

Publication series

NameProceedings - IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems
ISSN (Print)1550-5774

Conference

Conference2012 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, DFT 2012
Country/TerritoryUnited States
CityAustin, TX
Period3/10/125/10/12

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