@inproceedings{fdf7991b3e4d4bc2b6a83c4f387eb948,
title = "Alternative magnesium calcium oxide gate dielectric for silicon carbide MOS application",
abstract = "Films of MgO and MgCaO ternaries were grown at low temperature as dielectrics on 6H-SiC by gas-source MBE. MgO grown at 300 and 400°C revealed crystallites textured toward the (111) orientation on SiC (0001). A solid-solution Mg.75Ca.25 ternary was grown having a minimal lattice mismatch and low root mean square (RMS) roughness of 0.5 nm. SiC pretreatments in UV-ozone reduced carbon contaminants on the surface of SiC, but resulted in the increase of fixed oxide charge in the oxide/SiC interface. Electrical breakdown fields >3.5 MV cm-1 and low density of interface states on the order of 1011 cm-2eV-1' were achieved for a Mg.75Ca.25O ternary grown at 300°C. These oxides are presented for the first time as low temperature alternatives to SiO2 gate dielectrics for SiO2 MOS applications.",
author = "Stodilka, {D. O.} and Gerger, {A. P.} and M. Hlad and P. Kumar and Gila, {B. P.} and R. Singh and Abernathy, {C. R.} and Pearton, {S. J.} and F. Ren",
year = "2006",
doi = "10.1557/proc-0911-b14-03",
language = "אנגלית",
isbn = "1558998721",
series = "Materials Research Society Symposium Proceedings",
publisher = "Materials Research Society",
pages = "347--352",
booktitle = "Silicon Carbide 2006 - Materials, Processing and Devices",
address = "ארצות הברית",
note = "2006 MRS Spring Meeting ; Conference date: 18-04-2006 Through 20-04-2006",
}