Alternative magnesium calcium oxide gate dielectric for silicon carbide MOS application

D. O. Stodilka, A. P. Gerger, M. Hlad, P. Kumar, B. P. Gila, R. Singh, C. R. Abernathy, S. J. Pearton, F. Ren

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations


Films of MgO and MgCaO ternaries were grown at low temperature as dielectrics on 6H-SiC by gas-source MBE. MgO grown at 300 and 400°C revealed crystallites textured toward the (111) orientation on SiC (0001). A solid-solution Mg.75Ca.25 ternary was grown having a minimal lattice mismatch and low root mean square (RMS) roughness of 0.5 nm. SiC pretreatments in UV-ozone reduced carbon contaminants on the surface of SiC, but resulted in the increase of fixed oxide charge in the oxide/SiC interface. Electrical breakdown fields >3.5 MV cm-1 and low density of interface states on the order of 1011 cm-2eV-1' were achieved for a Mg.75Ca.25O ternary grown at 300°C. These oxides are presented for the first time as low temperature alternatives to SiO2 gate dielectrics for SiO2 MOS applications.

Original languageEnglish
Title of host publicationSilicon Carbide 2006 - Materials, Processing and Devices
PublisherMaterials Research Society
Number of pages6
ISBN (Print)1558998721, 9781558998728
StatePublished - 2006
Externally publishedYes
Event2006 MRS Spring Meeting - San Francisco, CA, United States
Duration: 18 Apr 200620 Apr 2006

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Conference2006 MRS Spring Meeting
Country/TerritoryUnited States
CitySan Francisco, CA


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