Air-Stable Room-Temperature Mid-Infrared Photodetectors Based on hBN/Black Arsenic Phosphorus/hBN Heterostructures

Shaofan Yuan; Chenfei Shen; Bingchen Deng; Xiaolong Chen; Qiushi Guo; Yuqiang Ma; Ahmad Abbas; Bilu Liu; Ralf Haiges; Claudia Ott; Tom Nilges; Kenji Watanabe; Takashi Taniguchi; Ofer Sinai; Doron Naveh; Chongwu Zhou; Fengnian Xia

doi:10.1021/acs.nanolett.8b00835

Air-Stable Room-Temperature Mid-Infrared Photodetectors Based on hBN/Black Arsenic Phosphorus/hBN Heterostructures

Shaofan Yuan, Chenfei Shen, Bingchen Deng, Xiaolong Chen, Qiushi Guo, Yuqiang Ma, Ahmad Abbas, Bilu Liu, Ralf Haiges, Claudia Ott, Tom Nilges, Kenji Watanabe, Takashi Taniguchi, Ofer Sinai, Doron Naveh, Chongwu Zhou, Fengnian Xia

Bar-Ilan University - The Alexander Kofkin Faculty of Engineering

Research output: Contribution to journal › Article › peer-review

155 Scopus citations

Abstract

Layered black phosphorus (BP) has attracted wide attention for mid-infrared photonics and high-speed electronics, due to its moderate band gap and high carrier mobility. However, its intrinsic band gap of around 0.33 electronvolt limits the operational wavelength range of BP photonic devices based on direct interband transitions to around 3.7 μm. In this work, we demonstrate that black arsenic phosphorus alloy (b-As_xP_1-x) formed by introducing arsenic into BP can significantly extend the operational wavelength range of photonic devices. The as-fabricated b-As_0.83P_0.17 photodetector sandwiched within hexagonal boron nitride (hBN) shows peak extrinsic responsivity of 190, 16, and 1.2 mA/W at 3.4, 5.0, and 7.7 μm at room temperature, respectively. Moreover, the intrinsic photoconductive effect dominates the photocurrent generation mechanism due to the preservation of pristine properties of b-As_0.83P_0.17 by complete hBN encapsulation, and these b-As_0.83P_0.17 photodetectors exhibit negligible transport hysteresis. The broad and large photoresponsivity within mid-infrared resulting from the intrinsic photoconduction, together with the excellent long-term air stability, makes b-As_0.83P_0.17 alloy a promising alternative material for mid-infrared applications, such as free-space communication, infrared imaging, and biomedical sensing.

Original language	English
Pages (from-to)	3172-3179
Number of pages	8
Journal	Nano Letters
Volume	18
Issue number	5
DOIs	https://doi.org/10.1021/acs.nanolett.8b00835
State	Published - 9 May 2018

Bibliographical note

Publisher Copyright:
© 2018 American Chemical Society.

Funding

F.X. acknowledges the partial support from the Air Force Office of Scientific Research (FA9550-14-1-0277) and the Office of Naval Research (N00014-14-0565). C.O. thanks the TUM Graduate School and BayCaTeC (grant 12 [2015-1]) for financial support. K.W. and T.T. acknowledge support from the Elemental Strategy Initiative conducted by the MEXT, Japan and JSPS KAKENHI grant nos. JP15K21722. D.N. thanks Israel Science Foundation for generous support under grant no. 1055/15. The Yale facilities used were partially supported by the Yale Institute for Nanoscience and Quantum Engineering (YINQE) and NSF MRSEC DMR 1119826.

Funders	Funder number
NSF MRSEC	DMR 1119826
TUM Graduate School and BayCaTeC	12 [2015-1
Yale Institute for Nanoscience and Quantum Engineering
Office of Naval Research	N00014-14-0565
Air Force Office of Scientific Research	FA9550-14-1-0277
Japan Society for the Promotion of Science
Ministry of Education, Culture, Sports, Science and Technology
Israel Science Foundation	1055/15

Keywords

Two-dimensional materials
black arsenic phosphorus
heterostructures
medium-wavelength infrared photodetector
photoconduction

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10.1021/acs.nanolett.8b00835

Cite this

Yuan, S., Shen, C., Deng, B., Chen, X., Guo, Q., Ma, Y., Abbas, A., Liu, B., Haiges, R., Ott, C., Nilges, T., Watanabe, K., Taniguchi, T., Sinai, O., Naveh, D., Zhou, C., & Xia, F. (2018). Air-Stable Room-Temperature Mid-Infrared Photodetectors Based on hBN/Black Arsenic Phosphorus/hBN Heterostructures. Nano Letters, 18(5), 3172-3179. https://doi.org/10.1021/acs.nanolett.8b00835

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title = "Air-Stable Room-Temperature Mid-Infrared Photodetectors Based on hBN/Black Arsenic Phosphorus/hBN Heterostructures",

abstract = "Layered black phosphorus (BP) has attracted wide attention for mid-infrared photonics and high-speed electronics, due to its moderate band gap and high carrier mobility. However, its intrinsic band gap of around 0.33 electronvolt limits the operational wavelength range of BP photonic devices based on direct interband transitions to around 3.7 μm. In this work, we demonstrate that black arsenic phosphorus alloy (b-AsxP1-x) formed by introducing arsenic into BP can significantly extend the operational wavelength range of photonic devices. The as-fabricated b-As0.83P0.17 photodetector sandwiched within hexagonal boron nitride (hBN) shows peak extrinsic responsivity of 190, 16, and 1.2 mA/W at 3.4, 5.0, and 7.7 μm at room temperature, respectively. Moreover, the intrinsic photoconductive effect dominates the photocurrent generation mechanism due to the preservation of pristine properties of b-As0.83P0.17 by complete hBN encapsulation, and these b-As0.83P0.17 photodetectors exhibit negligible transport hysteresis. The broad and large photoresponsivity within mid-infrared resulting from the intrinsic photoconduction, together with the excellent long-term air stability, makes b-As0.83P0.17 alloy a promising alternative material for mid-infrared applications, such as free-space communication, infrared imaging, and biomedical sensing.",

keywords = "Two-dimensional materials, black arsenic phosphorus, heterostructures, medium-wavelength infrared photodetector, photoconduction",

author = "Shaofan Yuan and Chenfei Shen and Bingchen Deng and Xiaolong Chen and Qiushi Guo and Yuqiang Ma and Ahmad Abbas and Bilu Liu and Ralf Haiges and Claudia Ott and Tom Nilges and Kenji Watanabe and Takashi Taniguchi and Ofer Sinai and Doron Naveh and Chongwu Zhou and Fengnian Xia",

note = "Publisher Copyright: {\textcopyright} 2018 American Chemical Society.",

year = "2018",

month = may,

day = "9",

doi = "10.1021/acs.nanolett.8b00835",

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Yuan, S, Shen, C, Deng, B, Chen, X, Guo, Q, Ma, Y, Abbas, A, Liu, B, Haiges, R, Ott, C, Nilges, T, Watanabe, K, Taniguchi, T, Sinai, O, Naveh, D, Zhou, C & Xia, F 2018, 'Air-Stable Room-Temperature Mid-Infrared Photodetectors Based on hBN/Black Arsenic Phosphorus/hBN Heterostructures', Nano Letters, vol. 18, no. 5, pp. 3172-3179. https://doi.org/10.1021/acs.nanolett.8b00835

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AU - Yuan, Shaofan

AU - Shen, Chenfei

AU - Deng, Bingchen

AU - Chen, Xiaolong

AU - Guo, Qiushi

AU - Ma, Yuqiang

AU - Abbas, Ahmad

AU - Liu, Bilu

AU - Haiges, Ralf

AU - Ott, Claudia

AU - Nilges, Tom

AU - Watanabe, Kenji

AU - Taniguchi, Takashi

AU - Sinai, Ofer

AU - Naveh, Doron

AU - Zhou, Chongwu

AU - Xia, Fengnian

PY - 2018/5/9

Y1 - 2018/5/9

N2 - Layered black phosphorus (BP) has attracted wide attention for mid-infrared photonics and high-speed electronics, due to its moderate band gap and high carrier mobility. However, its intrinsic band gap of around 0.33 electronvolt limits the operational wavelength range of BP photonic devices based on direct interband transitions to around 3.7 μm. In this work, we demonstrate that black arsenic phosphorus alloy (b-AsxP1-x) formed by introducing arsenic into BP can significantly extend the operational wavelength range of photonic devices. The as-fabricated b-As0.83P0.17 photodetector sandwiched within hexagonal boron nitride (hBN) shows peak extrinsic responsivity of 190, 16, and 1.2 mA/W at 3.4, 5.0, and 7.7 μm at room temperature, respectively. Moreover, the intrinsic photoconductive effect dominates the photocurrent generation mechanism due to the preservation of pristine properties of b-As0.83P0.17 by complete hBN encapsulation, and these b-As0.83P0.17 photodetectors exhibit negligible transport hysteresis. The broad and large photoresponsivity within mid-infrared resulting from the intrinsic photoconduction, together with the excellent long-term air stability, makes b-As0.83P0.17 alloy a promising alternative material for mid-infrared applications, such as free-space communication, infrared imaging, and biomedical sensing.

AB - Layered black phosphorus (BP) has attracted wide attention for mid-infrared photonics and high-speed electronics, due to its moderate band gap and high carrier mobility. However, its intrinsic band gap of around 0.33 electronvolt limits the operational wavelength range of BP photonic devices based on direct interband transitions to around 3.7 μm. In this work, we demonstrate that black arsenic phosphorus alloy (b-AsxP1-x) formed by introducing arsenic into BP can significantly extend the operational wavelength range of photonic devices. The as-fabricated b-As0.83P0.17 photodetector sandwiched within hexagonal boron nitride (hBN) shows peak extrinsic responsivity of 190, 16, and 1.2 mA/W at 3.4, 5.0, and 7.7 μm at room temperature, respectively. Moreover, the intrinsic photoconductive effect dominates the photocurrent generation mechanism due to the preservation of pristine properties of b-As0.83P0.17 by complete hBN encapsulation, and these b-As0.83P0.17 photodetectors exhibit negligible transport hysteresis. The broad and large photoresponsivity within mid-infrared resulting from the intrinsic photoconduction, together with the excellent long-term air stability, makes b-As0.83P0.17 alloy a promising alternative material for mid-infrared applications, such as free-space communication, infrared imaging, and biomedical sensing.

KW - Two-dimensional materials

KW - black arsenic phosphorus

KW - heterostructures

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Air-Stable Room-Temperature Mid-Infrared Photodetectors Based on hBN/Black Arsenic Phosphorus/hBN Heterostructures

Abstract

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Keywords

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