Air-Stable Room-Temperature Mid-Infrared Photodetectors Based on hBN/Black Arsenic Phosphorus/hBN Heterostructures

Shaofan Yuan, Chenfei Shen, Bingchen Deng, Xiaolong Chen, Qiushi Guo, Yuqiang Ma, Ahmad Abbas, Bilu Liu, Ralf Haiges, Claudia Ott, Tom Nilges, Kenji Watanabe, Takashi Taniguchi, Ofer Sinai, Doron Naveh, Chongwu Zhou, Fengnian Xia

Research output: Contribution to journalArticlepeer-review

145 Scopus citations

Abstract

Layered black phosphorus (BP) has attracted wide attention for mid-infrared photonics and high-speed electronics, due to its moderate band gap and high carrier mobility. However, its intrinsic band gap of around 0.33 electronvolt limits the operational wavelength range of BP photonic devices based on direct interband transitions to around 3.7 μm. In this work, we demonstrate that black arsenic phosphorus alloy (b-AsxP1-x) formed by introducing arsenic into BP can significantly extend the operational wavelength range of photonic devices. The as-fabricated b-As0.83P0.17 photodetector sandwiched within hexagonal boron nitride (hBN) shows peak extrinsic responsivity of 190, 16, and 1.2 mA/W at 3.4, 5.0, and 7.7 μm at room temperature, respectively. Moreover, the intrinsic photoconductive effect dominates the photocurrent generation mechanism due to the preservation of pristine properties of b-As0.83P0.17 by complete hBN encapsulation, and these b-As0.83P0.17 photodetectors exhibit negligible transport hysteresis. The broad and large photoresponsivity within mid-infrared resulting from the intrinsic photoconduction, together with the excellent long-term air stability, makes b-As0.83P0.17 alloy a promising alternative material for mid-infrared applications, such as free-space communication, infrared imaging, and biomedical sensing.

Original languageEnglish
Pages (from-to)3172-3179
Number of pages8
JournalNano Letters
Volume18
Issue number5
DOIs
StatePublished - 9 May 2018

Bibliographical note

Publisher Copyright:
© 2018 American Chemical Society.

Keywords

  • Two-dimensional materials
  • black arsenic phosphorus
  • heterostructures
  • medium-wavelength infrared photodetector
  • photoconduction

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