Aggregate structure in CuBSe₂/Mo films (B=In,Ga): Its relation to their electrical activity

Keyphrases

• Electrical Activity 100%
• Aggregate Structure 100%
• Mo Film 100%
• Transmission Electron Microscopy 66%
• Crystallites 66%
• Tetragonal 33%
• Scanning Electron Microscopy 33%
• Aluminum Oxide 33%
• Electron Microscopy Studies 33%
• Microscopic Techniques 33%
• Current Mode 33%
• I-V Characteristics 33%
• Electrical Measurements 33%
• Glass Substrate 33%
• Phase Separation 33%
• Amorphous Materials 33%
• Sphalerite 33%
• Optical Microscopic 33%
• CuSe 33%
• Collection Efficiency 33%
• Average Grain Size 33%
• Nomarski 33%
• Electron Beam Induced Current 33%
• Schottky Contact 33%
• Deformation Pattern 33%
• Polycrystalline Structure 33%
• CuInSe2 33%
• Chalcopyrite Structure 33%
• In2Se3 33%
• Si Single Crystal 33%
• Crystal Glass 33%
• Intergranular Phase 33%
• Nomarski Microscopy 33%
• Coarse Aggregate 33%
• Electron Microscopic 33%

Engineering

• Transmissions 100%
• Electrical Activity 100%
• Crystallite 100%
• Aluminum Oxide 50%
• Si Substrate 50%
• Glass Substrate 50%
• Electrical Measurement 50%
• Collection Efficiency 50%
• Schottky Barrier 50%
• Polycrystalline 50%
• Phase Separation 50%
• Average Grain Size 50%
• Coarse Aggregate 50%
• Current-Voltage Characteristic 50%

Material Science

• Film 100%
• Transmission Electron Microscopy 66%
• Crystallite 66%
• Grain Size 33%
• Single Crystal 33%
• Scanning Electron Microscopy 33%
• Amorphous Material 33%
• Aluminum Oxide 33%
• Current-Voltage Characteristic 33%
• Schottky Barrier 33%