Advances in chemical-mechanical planarization

Rajiv K. Singh, Rajeev Bajaj

Research output: Contribution to journalArticlepeer-review

119 Scopus citations

Abstract

The primary aim of this issue of MRS Bulletin is to present an overview of the materials issues in chemical-mechanical planarization (CMP), also known as chemical-mechanial polishing, a process that is used in the semiconductor industry to isolate and connect individual transistors on a chip. The CMP process has been the fastest-growing semiconductor operation in the last decade, and its future growth is being fueled by the introduction of copper-based interconnects in advanced microprocessors and other devices. Articles in this issue range from providing a fundamental understanding of the CMP process to the latest advancements in the field. Topics covered in these articles include an overview of CMP, fundamental principles of slurry design, understanding wafer-pad-slurry interactions, process integration issues, the formulation of abrasive-free slurries for copper polishing, understanding surface topography issues in shallow trench isolation, and emerging applications.

Original languageEnglish
Pages (from-to)743-748
Number of pages6
JournalMRS Bulletin
Volume27
Issue number10
DOIs
StatePublished - Oct 2002
Externally publishedYes

Keywords

  • CMP
  • Chemical-mechanical planarization
  • Chemical-mechanical polishing
  • Copper interconnects
  • Low-κ dielectrics
  • Nanotopography
  • Shallow trench isolation
  • Silica polishing
  • Slurry design

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