Abstract
Using high quality, anisotropically etched Si waveguides bonded to InGaAsP, the authors demonstrate a hybrid laser, whose optical profile overlaps both Si and III-V regions. Continuous wave laser operation was obtained up to 45 °C, with single facet power as high as 12.7 mW at 15 °C. Planar SiOptical resonators with Q=4.8× 106 are also demonstrated. By using a SF6/C4F8 reactive ion etch, followed by H 2SO4/HF surface treatment and oxygen plasma oxide, the optical losses due to the waveguide and the bonding interface are minimized. Changes of optical confinement in the silicon are observed due to waveguide width variation.
| Original language | English |
|---|---|
| Pages (from-to) | 3180-3182 |
| Number of pages | 3 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 27 |
| Issue number | 6 |
| DOIs | |
| State | Published - 2009 |
| Externally published | Yes |
Bibliographical note
Funding Information:This work was supported by Defense Advanced Research Projects Agency (DARPA) Contract No. N66001-07-1-2058 and HR0011-04-1-0054, the U.S. Air Force Office of Scientific Research (AFOSR) Grant No. FA9550-06-1-0480, and the Center for Science and Engineering of Materials, a National Science Foundation (NSF) Materials Research Science and Engineering Center at Caltech. The authors thank the Kavli Nanoscience Institute, Caltech, for supporting fabrication. M.S. thanks the NSF Graduate Research Fellowship program. A.Z. acknowledges postdoctoral fellowships from the Center for the Physics of Information, Caltech, and the Rothschild fellowship from Yad-Hanadiv Foundation, Israel.