Activation characteristics of donor and acceptor implants in GaN

X. A. Cao; S. J. Pearton; R. K. Singh; R. G. Wilson; J. A. Sekhar; J. C. Zolper; J. Han; D. J. Rieger; R. J. Shul; H. J. Guo; S. J. Pennycook; J. M. Zavada

doi:10.1557/proc-572-513

Activation characteristics of donor and acceptor implants in GaN

X. A. Cao
, S. J. Pearton
, R. K. Singh
, R. G. Wilson
, J. A. Sekhar
, J. C. Zolper
, J. Han
, D. J. Rieger
, R. J. Shul
, H. J. Guo
, S. J. Pennycook
, J. M. Zavada

University of Florida
Micropyretics Heaters Intl. Inc.
Office of Naval Research
Sandia National Laboratories
Oak Ridge National Laboratory
USARDSG

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

The ionization levels of different donor and acceptor species implanted into GaN were measured by temperature-dependent Hall data after high temperature (1400°C) annealing. The values obtained were 28 meV (Si), 48 meV (S), 50 meV (Te) for the donors, and 170 meV for Mg acceptor. P-type conductivity was not achieved with either Be or C implantation. Basically all of the implanted species show no distribution during activation annealing. For high implant doses (5 × 10¹⁵ cm^-2) a high concentration of extended defects remains after 1100°C anneals, but higher temperatures (1400°C) produces a significant improvement in crystalline quality in the implanted region.

Original language	English
Pages (from-to)	513-518
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	572
DOIs	https://doi.org/10.1557/proc-572-513
State	Published - 1999
Externally published	Yes
Event	Proceedings of the 1999 MRS Spring Meeting - Symposium on 'Wide-Bandgap Semiconductors for High-Power, High Frequency and High-Temperature Applications' - San Francisco, CA, USA Duration: 5 Apr 1999 → 8 Apr 1999

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title = "Activation characteristics of donor and acceptor implants in GaN",

abstract = "The ionization levels of different donor and acceptor species implanted into GaN were measured by temperature-dependent Hall data after high temperature (1400°C) annealing. The values obtained were 28 meV (Si), 48 meV (S), 50 meV (Te) for the donors, and 170 meV for Mg acceptor. P-type conductivity was not achieved with either Be or C implantation. Basically all of the implanted species show no distribution during activation annealing. For high implant doses (5 × 1015 cm-2) a high concentration of extended defects remains after 1100°C anneals, but higher temperatures (1400°C) produces a significant improvement in crystalline quality in the implanted region.",

author = "Cao, \{X. A.\} and Pearton, \{S. J.\} and Singh, \{R. K.\} and Wilson, \{R. G.\} and Sekhar, \{J. A.\} and Zolper, \{J. C.\} and J. Han and Rieger, \{D. J.\} and Shul, \{R. J.\} and Guo, \{H. J.\} and Pennycook, \{S. J.\} and Zavada, \{J. M.\}",

year = "1999",

doi = "10.1557/proc-572-513",

language = "אנגלית",

volume = "572",

pages = "513--518",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1999 MRS Spring Meeting - Symposium on 'Wide-Bandgap Semiconductors for High-Power, High Frequency and High-Temperature Applications' ; Conference date: 05-04-1999 Through 08-04-1999",

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TY - JOUR

T1 - Activation characteristics of donor and acceptor implants in GaN

AU - Cao, X. A.

AU - Pearton, S. J.

AU - Singh, R. K.

AU - Wilson, R. G.

AU - Sekhar, J. A.

AU - Zolper, J. C.

AU - Han, J.

AU - Rieger, D. J.

AU - Shul, R. J.

AU - Guo, H. J.

AU - Pennycook, S. J.

AU - Zavada, J. M.

PY - 1999

Y1 - 1999

N2 - The ionization levels of different donor and acceptor species implanted into GaN were measured by temperature-dependent Hall data after high temperature (1400°C) annealing. The values obtained were 28 meV (Si), 48 meV (S), 50 meV (Te) for the donors, and 170 meV for Mg acceptor. P-type conductivity was not achieved with either Be or C implantation. Basically all of the implanted species show no distribution during activation annealing. For high implant doses (5 × 1015 cm-2) a high concentration of extended defects remains after 1100°C anneals, but higher temperatures (1400°C) produces a significant improvement in crystalline quality in the implanted region.

AB - The ionization levels of different donor and acceptor species implanted into GaN were measured by temperature-dependent Hall data after high temperature (1400°C) annealing. The values obtained were 28 meV (Si), 48 meV (S), 50 meV (Te) for the donors, and 170 meV for Mg acceptor. P-type conductivity was not achieved with either Be or C implantation. Basically all of the implanted species show no distribution during activation annealing. For high implant doses (5 × 1015 cm-2) a high concentration of extended defects remains after 1100°C anneals, but higher temperatures (1400°C) produces a significant improvement in crystalline quality in the implanted region.

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T2 - Proceedings of the 1999 MRS Spring Meeting - Symposium on 'Wide-Bandgap Semiconductors for High-Power, High Frequency and High-Temperature Applications'

Y2 - 5 April 1999 through 8 April 1999

ER -

Activation characteristics of donor and acceptor implants in GaN

Abstract

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