Activation characteristics of donor and acceptor implants in GaN

X. A. Cao; S. J. Pearton; R. K. Singh; R. G. Wilson; J. A. Sekhar; J. C. Zolper; J. Han; D. J. Rieger; R. J. Shul; H. J. Guo; S. J. Pennycook; J. M. Zavada

doi:10.1557/proc-572-513

Activation characteristics of donor and acceptor implants in GaN

X. A. Cao, S. J. Pearton, R. K. Singh, R. G. Wilson, J. A. Sekhar, J. C. Zolper, J. Han, D. J. Rieger, R. J. Shul, H. J. Guo, S. J. Pennycook, J. M. Zavada

Research output: Contribution to journal › Conference article › peer-review

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Abstract

The ionization levels of different donor and acceptor species implanted into GaN were measured by temperature-dependent Hall data after high temperature (1400°C) annealing. The values obtained were 28 meV (Si), 48 meV (S), 50 meV (Te) for the donors, and 170 meV for Mg acceptor. P-type conductivity was not achieved with either Be or C implantation. Basically all of the implanted species show no distribution during activation annealing. For high implant doses (5 × 10¹⁵ cm^-2) a high concentration of extended defects remains after 1100°C anneals, but higher temperatures (1400°C) produces a significant improvement in crystalline quality in the implanted region.

Original language	English
Pages (from-to)	513-518
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	572
DOIs	https://doi.org/10.1557/proc-572-513
State	Published - 1999
Externally published	Yes
Event	Proceedings of the 1999 MRS Spring Meeting - Symposium on 'Wide-Bandgap Semiconductors for High-Power, High Frequency and High-Temperature Applications' - San Francisco, CA, USA Duration: 5 Apr 1999 → 8 Apr 1999

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title = "Activation characteristics of donor and acceptor implants in GaN",

abstract = "The ionization levels of different donor and acceptor species implanted into GaN were measured by temperature-dependent Hall data after high temperature (1400°C) annealing. The values obtained were 28 meV (Si), 48 meV (S), 50 meV (Te) for the donors, and 170 meV for Mg acceptor. P-type conductivity was not achieved with either Be or C implantation. Basically all of the implanted species show no distribution during activation annealing. For high implant doses (5 × 1015 cm-2) a high concentration of extended defects remains after 1100°C anneals, but higher temperatures (1400°C) produces a significant improvement in crystalline quality in the implanted region.",

author = "Cao, {X. A.} and Pearton, {S. J.} and Singh, {R. K.} and Wilson, {R. G.} and Sekhar, {J. A.} and Zolper, {J. C.} and J. Han and Rieger, {D. J.} and Shul, {R. J.} and Guo, {H. J.} and Pennycook, {S. J.} and Zavada, {J. M.}",

year = "1999",

doi = "10.1557/proc-572-513",

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T1 - Activation characteristics of donor and acceptor implants in GaN

AU - Cao, X. A.

AU - Pearton, S. J.

AU - Singh, R. K.

AU - Wilson, R. G.

AU - Sekhar, J. A.

AU - Zolper, J. C.

AU - Han, J.

AU - Rieger, D. J.

AU - Shul, R. J.

AU - Guo, H. J.

AU - Pennycook, S. J.

AU - Zavada, J. M.

PY - 1999

Y1 - 1999

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AB - The ionization levels of different donor and acceptor species implanted into GaN were measured by temperature-dependent Hall data after high temperature (1400°C) annealing. The values obtained were 28 meV (Si), 48 meV (S), 50 meV (Te) for the donors, and 170 meV for Mg acceptor. P-type conductivity was not achieved with either Be or C implantation. Basically all of the implanted species show no distribution during activation annealing. For high implant doses (5 × 1015 cm-2) a high concentration of extended defects remains after 1100°C anneals, but higher temperatures (1400°C) produces a significant improvement in crystalline quality in the implanted region.

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T2 - Proceedings of the 1999 MRS Spring Meeting - Symposium on 'Wide-Bandgap Semiconductors for High-Power, High Frequency and High-Temperature Applications'

Y2 - 5 April 1999 through 8 April 1999

ER -

Activation characteristics of donor and acceptor implants in GaN

Abstract

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