Activation characteristics of donor and acceptor implants in GaN

X. A. Cao, S. J. Pearton, R. K. Singh, R. G. Wilson, J. A. Sekhar, J. C. Zolper, J. Han, D. J. Rieger, R. J. Shul, H. J. Guo, S. J. Pennycook, J. M. Zavada

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1 Scopus citations


The ionization levels of different donor and acceptor species implanted into GaN were measured by temperature-dependent Hall data after high temperature (1400°C) annealing. The values obtained were 28 meV (Si), 48 meV (S), 50 meV (Te) for the donors, and 170 meV for Mg acceptor. P-type conductivity was not achieved with either Be or C implantation. Basically all of the implanted species show no distribution during activation annealing. For high implant doses (5 × 1015 cm-2) a high concentration of extended defects remains after 1100°C anneals, but higher temperatures (1400°C) produces a significant improvement in crystalline quality in the implanted region.

Original languageEnglish
Pages (from-to)513-518
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 1999
Externally publishedYes
EventProceedings of the 1999 MRS Spring Meeting - Symposium on 'Wide-Bandgap Semiconductors for High-Power, High Frequency and High-Temperature Applications' - San Francisco, CA, USA
Duration: 5 Apr 19998 Apr 1999


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