Activation annealing of Si-implanted GaN up to 1500°C using a novel RTP technique

M. Fu, V. Sarvepalli, R. K. Singh, C. R. Abernathy, X. Cao, S. J. Pearton, J. A. Sekhar

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

A novel rapid thermal processing (RTP) unit called Zapper™ has recently been developed by MHI Inc. and the University of Florida for high temperature thermal processing of semiconductors. This Zapper™ unit is capable of reaching much higher temperatures (> 1500°C) than conventional tungsten-halogen lamp RTP equipment and achieving high ramp-up and ramp-down rates. Implant activation annealing studies of Si+-implanted GaN thin films (with and without an AlN encapsulation layer) have been conducted using the Zapper™ unit at temperatures up to 1500°C. The measurements of electrical properties of such annealed samples have led to the conclusion that high annealing temperatures and AlN encapsulation are needed for the optimum activation efficiency of Si+ implants in GaN. It has clearly been demonstrated that the Zapper™ unit has tremendous potential for RTP annealing of semiconductor materials, especially for wide bandgap compound semiconductors that require very high processing temperatures.

Original languageEnglish
Pages (from-to)1329-1333
Number of pages5
JournalJournal of Electronic Materials
Volume27
Issue number12
DOIs
StatePublished - Dec 1998
Externally publishedYes

Funding

This work is partially supported by NSF and the Ballistic Missile Defense Organization (BMDO) of the U.S. Department of Defense through the SBIR program under Contract No. F19628-97-C-0092. Dr. Joseph Lorenzo is the program manager. MHI funding of the University of Florida effort is gratefully acknowledged.

FundersFunder number
Ballistic Missile Defense Organization
National Science Foundation
U.S. Department of Defense
Small Business Innovation ResearchF19628-97-C-0092

    Keywords

    • Activation annealing
    • GaN
    • Rapid thermal processing (RTP)
    • Si-implants

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