Abstract
A novel rapid thermal processing (RTP) unit called Zapper™ has recently been developed by MHI Inc. and the University of Florida for high temperature thermal processing of semiconductors. This Zapper™ unit is capable of reaching much higher temperatures (> 1500°C) than conventional tungsten-halogen lamp RTP equipment and achieving high ramp-up and ramp-down rates. Implant activation annealing studies of Si+-implanted GaN thin films (with and without an AlN encapsulation layer) have been conducted using the Zapper™ unit at temperatures up to 1500°C. The measurements of electrical properties of such annealed samples have led to the conclusion that high annealing temperatures and AlN encapsulation are needed for the optimum activation efficiency of Si+ implants in GaN. It has clearly been demonstrated that the Zapper™ unit has tremendous potential for RTP annealing of semiconductor materials, especially for wide bandgap compound semiconductors that require very high processing temperatures.
| Original language | English |
|---|---|
| Pages (from-to) | 1329-1333 |
| Number of pages | 5 |
| Journal | Journal of Electronic Materials |
| Volume | 27 |
| Issue number | 12 |
| DOIs | |
| State | Published - Dec 1998 |
| Externally published | Yes |
Funding
This work is partially supported by NSF and the Ballistic Missile Defense Organization (BMDO) of the U.S. Department of Defense through the SBIR program under Contract No. F19628-97-C-0092. Dr. Joseph Lorenzo is the program manager. MHI funding of the University of Florida effort is gratefully acknowledged.
| Funders | Funder number |
|---|---|
| Ballistic Missile Defense Organization | |
| National Science Foundation | |
| U.S. Department of Defense | |
| Small Business Innovation Research | F19628-97-C-0092 |
Keywords
- Activation annealing
- GaN
- Rapid thermal processing (RTP)
- Si-implants