Abstract
One of the most common techniques for increasing data bitrate using the telecommunication system is to use dense wavelength division multiplexing (DWDM). However, the implementation of DWDM with more channels requires additional waveguide coupler devices and greater energy consumption, which can limit the system performances. To solve these issues, we propose a new approach for designing the demultiplexer using angled multimode interference (AMMI) in gallium nitride (GaN)–silica (SiO2) slot waveguide structures. SiO2 and GaN materials are selected for confining the infrared light inside the GaN areas under the transverse electric (TE) field mode. The results show that, after 3.56 mm light propagation, three infrared wavelengths in the C-band can be demultiplexed using a single AMMI coupler with a power loss of 1.31 to 2.44 dB, large bandwidth of 12 to 13.69 nm, very low power back reflection of 47.64 to 48.76 dB, and crosstalk of −12.67 to −15.62 dB. Thus, the proposed design has the potential for improving performances in the telecommunication system that works with DWDM technology.
Original language | English |
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Article number | 2338 |
Pages (from-to) | 1-15 |
Number of pages | 15 |
Journal | Nanomaterials |
Volume | 10 |
Issue number | 12 |
DOIs | |
State | Published - 25 Nov 2020 |
Externally published | Yes |
Bibliographical note
Publisher Copyright:© 2020 by the authors. Licensee MDPI, Basel, Switzerland.
Keywords
- AMMI
- C-band
- Demultiplexer
- GaN
- Slot-waveguide